Latest Space News
Fri, 24 May 2013 08:42:00 +0100
The Ring Nebula's distinctive shape makes it a popular illustration for astronomy books. But new observations by NASA's Hubble Space Telescope of the glowing gas shroud around an old, dying, sun-like star reveal a new twist.
"The nebula is not like a bagel, but rather, it's like a jelly doughnut, because it's filled with material in the middle," said C. Robert O'Dell of Vanderbilt University in Nashville, Tenn. He leads a research team that used Hubble and se...
Fri, 24 May 2013 08:38:00 +0100
Soyuz Flight VS05
The Soyuz launcher for Arianespace’s next medium-lift mission is rapidly taking shape at French Guiana as this vehicle undergoes its build-up for a June flight with the first four satellites in O3b Networks’ connectivity constellation.
During activity this week in the Spaceport’s MIK launcher integration building for Soyuz, the vehicle’s core second stage was completed with the mating of its upper and lower sections. Today, team members ...
Fri, 24 May 2013 02:40:00 +0100
QUITO -
A tiny Ecuadoran satellite that collided in space with the remains of a Soviet rocket survived the crash, but was damaged and is not transmitting, Quito's space agency said Thursday.
Ecuador's space agency EXA had warned on Wednesday that a space fender-bender was likely between its "Pegaso" (Pegasus) nanosatellite and the remains of an S14 rocket launched by the Soviet Union into space in 1985, in the midst of the Cold War.
The agency's director Ronnie Nader sai...
Thu, 23 May 2013 08:20:00 +0100
A rare encounter between two gas-rich galaxies spotted by ESA’s Herschel space observatory indicates a solution to an outstanding problem: how did massive, passive galaxies form in the early Universe?
Most large galaxies fall into one of two major categories: spirals like our own Milky Way that are full of gas and actively forming stars, or gas-poor ellipticals, populated by old cool red stars and showing few signs of ongoing star formation.
It was long assumed that the large el...
Thu, 23 May 2013 08:09:00 +0100
HERNDON, Va. -
The Jet Propulsion Laboratory (JPL) has selected ITT Exelis (NYSE: XLS) to provide maintenance, operations, and engineering services for NASA’s international Deep Space Network (DSN). The subcontract has a base period of performance of five years, with incentive provisions that can extend the contract up to 10 years for a total value of $435 million.
Under the DSN subcontract, Exelis will support an international network of communications complexes that supports interplanetary robot...
Search Space Careers
powered by
Quick CV Search |
CV: PhD student
Printer Friendly
PDF Version
Save as RSS
Personal information
Contact information
Candidate Profile
Date Submitted: Last Modified:Job information
Current job: Employment Term: Job location: Date available: Industry: KeywordsCV
CURRICULUM VITAE
PERSONAL DETAILS
Date and place of birth: Mirano, Venice, Italy, March 9, 1982
Nationality: Italian
Marital Status: Single
EDUCATION AND QUALIFICATIONS
January 2007 – February 2010 (expected)
Ph.D. student at the Department of Information Engineering (DEI), University of Padova, Padova, Italy.
Supervisor: Prof. G. Meneghesso.
January 2008 – May 2009
Guest Ph.D. student at the Interuniversity Microelectronics Center (IMEC), Leuven, Belgium, working on the ESD design and characterization of multi-gate FinFET devices.
Supervisor: Prof. G. Groeseneken.
July 3, 2006 “Laurea” degree (equivalent to M.S. degree) summa cum laude in Electronic Engineering, major Microelectronics, received from the University of Padova, Padova, Italy.
Title of the thesis: “Reliability of Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide in 65-nm CMOS Technology”.
September 15, 2004 B.S. degree in Information Engineering received from the University of Padova, Padova, Italy.
Title of the thesis: “Stochastic Differential Equations”.
July 2001 High-school degree as aeronautic expert with a score of 100/100 after 5 years of high- school courses from the “I.T.I.S. G. Natta” School of Padova, Italy.
RESEARCH INTERESTS
Electrostatic discharge (ESD) and ionizing radiation effects on advanced CMOS devices.
ESD ESD design and characterization of FinFET devices in both bulk and SOI substrate technologies and planar fully depleted SOI MOSFETs with ultra-thin silicon body.
Radiation effects Microdose effects induced by heavy-ion strikes in planar fully depleted SOI MOSFETs and SOI FinFET devices and dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays.
COLLABORATION WITH INDUSTRIES AND RESEARCH CENTERS
2006 - 2009 Collaborating with:
1. Microelectronics Group of DEI, University of Padova, Padova Italy
2. IMEC, Leuven, Belgium
3. Laboratori Nazionali di Legnaro (LNL) of the Istituto Nazionale di Fisica Nucleare (INFN), Padova, Italy.
4. Infineon, Munich, Germany.
LANGUAGES SKILLS
- Italian: mother tongue.
- English: good. I passed the GRE – General Test and the Trinity testes in 2006 and 2001, respectively.
EXPERIMENTAL SKILLS
- Optimum knowledge and manual skill of the Transmission Line Pulse (TLP), Human Body Model (HBM), and very fast Transmission Line Pulse (vfTLP) ESD stress systems.
- Optimum knowledge and manual skill of the heavy-ion beam, X-rays, and g-rays radiation facilities.
COMPUTER SKILLS
- Good knowledge of P-Spice, H-Spice, Mathlab, MathCad, and Office.
- Discrete knowledge of Cadence, Python, Java, and Sun and Linux operating systems.
- Basic knowledge of DESSIS, Sentaurus, and TSUPREM TCAD simulators and LabView.
OTHER SKILLS
- Optimum knowledge of transistor reliability, advanced transistor characterization techniques, reliability modeling, analog and digital circuit reliability and device physics.
- I consider myself to be self-directed, pro-active and innovative and to have optimum communication skills and self organization.
- I consider myself open to learn and investigate new exciting topics.
OTHER
IEEE student member and member of IEEE Electron Devices Society, IEEE Reliability Society, IEEE Nuclear and Plasma Sciences Society, and ESD Association.
REFERENCES
References are available on request.
PUBLICATIONS
International journal papers
[1] S. Thijs, D. Trémouilles, C. Russ, A. Griffoni, N. Collaert, R. Rooyackers, D. Linten, M. Scholz, C. Duvvury, H. Gossner, M. Jurczak, and G. Groeseneken, “Characterization and Optimization of Sub-32nm FinFET Devices for ESD Applications”, IEEE Transaction on Electron Devices, vol. 55, no. 12, pp. 3507-3516, December 2008.
[2] A. Griffoni, S. Gerardin, G. Meneghesso, A. Paccagnella, E. Simoen, S. Put, and C. Claeys, “Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs”, Transaction on Nuclear Science, vol. 55, no.6, pp. 3182-3188, December 2008.
[3] A. Griffoni, M. Silvestri, S. Gerardin, G. Meneghesso, A. Paccagnella, B. Kaczer, M. de Potter de ten Broeck, R. Verbeeck, and A. Nackaerts, “Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays”, in press in IEEE Transaction on Nuclear Science.
[4] A. Griffoni, S. Gerardin, A. Cester, A. Paccagnella, E. Simoen, and C. ClaeysEffects of Heavy-Ion Strikes on Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques”, IEEE Transaction on Nuclear Science, vol. 54, no. 6, pp. 2257-2263, December 2007., “
[5] S. Gerardin, A. Griffoni, A. Tazzoli, A. Cester, G. Meneghesso, and A. Paccagnella, “Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide”, IEEE Transaction on Nuclear Science, vol. 54, no. 6, pp. 2204-2209, December 2007.
[6] S. Gerardin, A. Griffoni, A. Cester, A. Paccagnella, G. Ghidini, “Degradation of Static and Dynamic Behavior of CMOS Inverters during Constant and Pulsed Voltage Stress”, Microelectronics Reliability, vol. 46, no 9-11, pp. 1669-1672, Sept. – Nov. 2006.
International conference papers
[7] A. Griffoni, S. Thijs, C. Russ, D. Trémouilles, M. Scholz, D. Linten, N. Collaert, R. Rooyackers, C. Duvvury, H. Gossner, G. Meneghesso, and G. Groeseneken, “Impact of Strain on ESD Robustness of FinFET Devices”, 2008 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, pp. 341-344, December 15-17, 2008.
[8] A. Griffoni, A. Tazzoli, S. Gerardin, E. Simoen, C. Claeys, and G. Meneghesso, “Electrostatic Discharge Effects in Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques”, 2008 Electrical Overstress / Electrostatic Discharge Symposium, Tucson, AZ, USA, pp. 59-66, September 7-12, 2008.
[9] S. Thijs, C. Russ, D. Trémouilles, A. Griffoni, D. Linten, M. Scholz, N. Collaert, R. Rooyackers, M. Jurczak, M. Sawada, T. Nakaei, T. Hasebe, C. Duvvury, H. Gossner, and G. Groeseneken, “Design Methodology of FinFET Devices that Meet IC-Level HBM ESD Targets”, 2008 Electrical Overstress / Electrostatic Discharge Symposium, Tucson, AZ, USA, pp- 295-303, September 7-12, 2008.
[10] A. Griffoni, A. Tazzoli, S. Gerardin, G. Meneghesso, E. Simoen, and C. Claeys, “ESD Sensitivity of 65-nm Fully Depleted SOI MOSFETs With Different Strain-Inducing Techniques”, 2008 International ESD Workshop, Domaine de Pinsolle, Port D’Albret – France, May 12-15, 2008.
[11] A. Griffoni, M. Silvestri, S. Gerardin, G. Meneghesso, A. Paccagnella, B. Kaczer, M. de Potter de ten Broeck, R. Verbeeck, and A. Nackaerts, “Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays”, 8th European Workshop on Radiation Effects on Components and Systems, Jyväskylä, Finland, September 10-12, 2008.
[12] A. Griffoni, S. Gerardin, G. Meneghesso, A. Paccagnella, E. Simoen, S. Put, and C. Claeys, “Microdose and Breakdown Effects Induced by Heavy Ions on sub 20-nm Triple-Gate SOI FETs”, 45th IEEE - Nuclear and Space Radiation Effects Conference - NSREC 2008, Tucson, AZ, USA, July 14-18, 2008.
[13] A. Griffoni, G. Meneghesso, and A. Paccagnella, “Ionizing Radiation Effects on Advanced CMOS Devices and on ESD Protection Structures for CMOS Technology”, RADFAC 2008, Mol - Belgium, March 19, 2008.
[14] A. Griffoni, E. Simoen, N. Collaert, C. Claeys, A. Paccagnella, and G. Meneghesso, “Multi-Gate Devices for the 32-nm Node and Beyond: Advantages and Issues”, 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, Italy, November 2-5, 2008.
[15] A. Griffoni, S. Gerardin, A. Cester, A. Paccagnella, E. Simoen, and C. Claeys, “Effects of Heavy-Ion Strikes on 65-nm Fully Depleted SOI MOSFETs with Strain-Inducing Techniques: New and Old Concerns”,44th Nuclear and Space Radiation Effects Conference - NSREC 2007, Honolulu, Hawaii, USA, July 23-27, 2007.
[16] S. Gerardin, A. Cester, A. Tazzoli, A. Griffoni, G. Meneghesso, and A. Paccagnella, “Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide”, 44th Nuclear and Space Radiation Effects Conference - NSREC 2007, Honolulu, Hawaii, USA, July 23-27, 2007.
[17] S. Gerardin, A. Griffoni, A. Degradation of Static and Dynamic Behavior of CMOS Inverters during Constant and Pulsed Voltage Stress”, 17th European Symposium Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2006), Wuppertal - Germany, October 3-6, 2006.Cester, A. Paccagnella, G. Ghidini, “
Italian journal papers
[18] S. Gerardin, A. Griffoni, A. Tazzoli, G. Meneghesso, and A. Paccagnella, “Electrostatic Discharge Sensitivity of Fully Depleted SOI MOSFETs Struck by Heavy Ions”, LNL Annual Report 2007, pp. 87-88, 2008.
[19] A. Griffoni, S. Gerardin, A. Paccagnella, E. Simoen, and C. Claeys, “Effects of Heavy-Ion Strikes on 65-nm Fully Depleted SOI MOSFETs: New and Old Concerns”, LNL Annual Report 2007, pp. 85-86, 2008.
Papers to be presented
[20] A. Griffoni, S. Thijs, C. Russ, D. Trémouilles, D. Linten, M. Scholz, N. Collaert, L. Witters, G. Meneghesso, and G. Groeseneken, “Next Generation Bulk FinFET Devices and Their Benefits for ESD Robustness”, 2009 Electrical Overstress / Electrostatic Discharge Symposium.
[21] S. Thijs, D. Trémouilles, A. Griffoni, C. Russ, D. Linten, M. Scholz, C. Duvvury, and G. Groeseneken, “Electrical and Thermal Scaling Trends for FinFET ESD Design”, 2009 Electrical Overstress / Electrostatic Discharge Symposium.
[22] S. Thijs, K. Raczkowski, D. Linten, M. Scholz, A. Griffoni, and G. Groeseneken, “CDM and HBM Analysis of ESD Protected 60 GHz Power Amplifier in 45 nm Low-Power Digital CMOS”, 2009 Electrical Overstress / Electrostatic Discharge Symposium.
[23] D. Linten, P. Roussel, M. Scholz, S. Thijs, A. Griffoni, M. Sawada, T. Hasebe, and G. Groeseneken, “Calibration of Very Fast TLP Transients”, 2009 Electrical Overstress / Electrostatic Discharge Symposium.
[24] A. Griffoni, S. Gerardin, P.J. Roussel, A. Ruzza, G. Meneghesso, A. Paccagnella, E. Simoen, and C. Claeys “A Statistical Approach to Microdose Induced Degradation in FinFET Devices”, 46th IEEE - Nuclear and Space Radiation Effects Conference - NSREC 2009.
[25] A. Griffoni, S. Gerardin, A. Ruzza, G. Meneghesso, A. Paccagnella, E. Simoen, and C. Claeys, “Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs”, 10th European Conference on Radiation and Its Effects on Components and Systems - RADECS 2009.
Submitted papers
[26] A. Griffoni, S. Gerardin, G. Meneghesso, A. Paccagnella, E. Simoen, S. Put, and C. Claeys, “Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs”, LNL Annual Report 2008.
[27] A. Griffoni, M. Silvestri, S. Gerardin, G. Meneghesso, A. Paccagnella, B. Kaczer, M. de Potter de ten Broeck, R. Verbeeck, and A. Nackaerts, “Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays”, LNL Annual Report 2008.
Registering is the only way of posting vacancies and obtaining contact details of candidates in our CV database.
All it takes is a few minutes and a credit card (Visa or American Express). To sign-up to this service, simply click on the Register link and fill in the form. You will then have instant access to our system after on-line payment where you will be able to complete the transaction in either US Dollars, UK Pounds or Euros.
All online credit/debit card transitions are handled through our secure third party payment processors at WorldPay. Worldpay are part of The Royal Bank of Scotland Group, the 5th biggest banking group in the world, WorldPay payment solutions are trusted by thousands of businesses, big and small worldwide.
Pricing starts at €400 (approx £350 or US$550 - use the convert tool for an exact conversion) for one month unlimited job postings and CV database access (for one user), with package discounts available if you have more permanent recruiting needs. For example, a Gold subscription will give you unlimited jobs posting and CV database access for one year at less than €250 per month!
| 1 month - Discovery | 400 euros | convert |
| 3 months - Bronze | 1050 euros | convert |
| 6 months - Silver | 1800 euros | convert |
| 12 months - Gold | 2950 euros | convert |
If online payment is not convenient, give us a call at +33(0)562211007 or send us an email at sales@space-careers.com. We will set up an account for you and invoice you. Note that you can also pay through PayPal.
Please note that the posting of academic positions is free of charge. All you need to do is email us your job description and we will post it for you.
VAT:
Spacelinks is based in France so the following European Union regulations regarding electronic commerce apply:
- if your business is located outside the EU, VAT does not apply to you
- if your business is located in France, you will be charged a 19.6% VAT
- if your business is located in the EU and you don't have a valid VAT registration number, you will be charged a 19.6% VAT
- if your business is located in the EU and you do have a valid VAT registration number, you won't be charged VAT provided you give us your VAT number (mandatory for invoicing)
- if your business is located outside the EU, VAT does not apply to you
- if your business is located in France, you will be charged a 19.6% VAT
- if your business is located in the EU and you don't have a valid VAT registration number, you will be charged a 19.6% VAT
- if your business is located in the EU and you do have a valid VAT registration number, you won't be charged VAT provided you give us your VAT number (mandatory for invoicing)
Support:
For sales enquiries and general information, you can call us on +33(0)562211007.
Support is available Mon-Fri on +33(0)562211007 or via email. Out-of-hours support is provided only via email.
Support is available Mon-Fri on +33(0)562211007 or via email. Out-of-hours support is provided only via email.
Please also note that we are located in France. Our normal office hours are 09:00 to 18:00 Monday to Friday. France timezone is GMT+1.
Warning:
We are very serious about our job seekers privacy so only legitimate recruiters and employers are eligible for a recruiter account. All subscriptions requests will be manually approved and recruiter accounts constantly monitored. Users who enter inaccurate or incomplete information will not gain access to post jobs or search resumes. Sharing of login details with a third party will result in the suspension of the recruiter's account with no subscription refund.
Recruitment agencies willing to have access to our CV database will have to purchase a Gold package and recruitment agencies recruiting for companies already using Space Careers will not be accepted.
Recruitment agencies willing to have access to our CV database will have to purchase a Gold package and recruitment agencies recruiting for companies already using Space Careers will not be accepted.
To ensure you are approved, please include the following on your application:
* The website address of your Company. Under construction websites will be rejected.
* Email - Must end in @yourcompany.com. Applications using free email accounts such as Hotmail, Yahoo or Gmail will be rejected.
* The website address of your Company. Under construction websites will be rejected.
* Email - Must end in @yourcompany.com. Applications using free email accounts such as Hotmail, Yahoo or Gmail will be rejected.
Individual exceptions can be made on a case by case basis by emailing sales@space-careers.com. Accounts found not to be in compliance will be deleted in the absence of an email.
