CURRICULUM VITAE
PERSONAL DETAILS
Date and place of birth: Mirano, Venice, Italy, March 9, 1982
Nationality: Italian
Marital Status: Single
EDUCATION AND QUALIFICATIONS
January 2007 – February 2010 (expected)
Ph.D. student at the Department of Information Engineering (DEI), University of Padova, Padova, Italy.
Supervisor: Prof. G. Meneghesso.
January 2008 – May 2009
Guest Ph.D. student at the Interuniversity Microelectronics Center (IMEC), Leuven, Belgium, working on the ESD design and characterization of multi-gate FinFET devices.
Supervisor: Prof. G. Groeseneken.
July 3, 2006 “Laurea” degree (equivalent to M.S. degree) summa cum laude in Electronic Engineering, major Microelectronics, received from the University of Padova, Padova, Italy.
Title of the thesis: “Reliability of Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide in 65-nm CMOS Technology”.
September 15, 2004 B.S. degree in Information Engineering received from the University of Padova, Padova, Italy.
Title of the thesis: “Stochastic Differential Equations”.
July 2001 High-school degree as aeronautic expert with a score of 100/100 after 5 years of high- school courses from the “I.T.I.S. G. Natta” School of Padova, Italy.
RESEARCH INTERESTS
Electrostatic discharge (ESD) and ionizing radiation effects on advanced CMOS devices.
ESD ESD design and characterization of FinFET devices in both bulk and SOI substrate technologies and planar fully depleted SOI MOSFETs with ultra-thin silicon body.
Radiation effects Microdose effects induced by heavy-ion strikes in planar fully depleted SOI MOSFETs and SOI FinFET devices and dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays.
COLLABORATION WITH INDUSTRIES AND RESEARCH CENTERS
2006 - 2009 Collaborating with:
1. Microelectronics Group of DEI, University of Padova, Padova Italy
2. IMEC, Leuven, Belgium
3. Laboratori Nazionali di Legnaro (LNL) of the Istituto Nazionale di Fisica Nucleare (INFN), Padova, Italy.
4. Infineon, Munich, Germany.
LANGUAGES SKILLS
- Italian: mother tongue.
- English: good. I passed the GRE – General Test and the Trinity testes in 2006 and 2001, respectively.
EXPERIMENTAL SKILLS
- Optimum knowledge and manual skill of the Transmission Line Pulse (TLP), Human Body Model (HBM), and very fast Transmission Line Pulse (vfTLP) ESD stress systems.
- Optimum knowledge and manual skill of the heavy-ion beam, X-rays, and g-rays radiation facilities.
COMPUTER SKILLS
- Good knowledge of P-Spice, H-Spice, Mathlab, MathCad, and Office.
- Discrete knowledge of Cadence, Python, Java, and Sun and Linux operating systems.
- Basic knowledge of DESSIS, Sentaurus, and TSUPREM TCAD simulators and LabView.
OTHER SKILLS
- Optimum knowledge of transistor reliability, advanced transistor characterization techniques, reliability modeling, analog and digital circuit reliability and device physics.
- I consider myself to be self-directed, pro-active and innovative and to have optimum communication skills and self organization.
- I consider myself open to learn and investigate new exciting topics.
OTHER
IEEE student member and member of IEEE Electron Devices Society, IEEE Reliability Society, IEEE Nuclear and Plasma Sciences Society, and ESD Association.
REFERENCES
References are available on request.
PUBLICATIONS
International journal papers
[1] S. Thijs, D. Trémouilles, C. Russ, A. Griffoni, N. Collaert, R. Rooyackers, D. Linten, M. Scholz, C. Duvvury, H. Gossner, M. Jurczak, and G. Groeseneken, “Characterization and Optimization of Sub-32nm FinFET Devices for ESD Applications”, IEEE Transaction on Electron Devices, vol. 55, no. 12, pp. 3507-3516, December 2008.
[2] A. Griffoni, S. Gerardin, G. Meneghesso, A. Paccagnella, E. Simoen, S. Put, and C. Claeys, “Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs”, Transaction on Nuclear Science, vol. 55, no.6, pp. 3182-3188, December 2008.
[3] A. Griffoni, M. Silvestri, S. Gerardin, G. Meneghesso, A. Paccagnella, B. Kaczer, M. de Potter de ten Broeck, R. Verbeeck, and A. Nackaerts, “Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays”, in press in IEEE Transaction on Nuclear Science.
[4] A. Griffoni, S. Gerardin, A. Cester, A. Paccagnella, E. Simoen, and C. ClaeysEffects of Heavy-Ion Strikes on Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques”, IEEE Transaction on Nuclear Science, vol. 54, no. 6, pp. 2257-2263, December 2007., “
[5] S. Gerardin, A. Griffoni, A. Tazzoli, A. Cester, G. Meneghesso, and A. Paccagnella, “Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide”, IEEE Transaction on Nuclear Science, vol. 54, no. 6, pp. 2204-2209, December 2007.
[6] S. Gerardin, A. Griffoni, A. Cester, A. Paccagnella, G. Ghidini, “Degradation of Static and Dynamic Behavior of CMOS Inverters during Constant and Pulsed Voltage Stress”, Microelectronics Reliability, vol. 46, no 9-11, pp. 1669-1672, Sept. – Nov. 2006.
International conference papers
[7] A. Griffoni, S. Thijs, C. Russ, D. Trémouilles, M. Scholz, D. Linten, N. Collaert, R. Rooyackers, C. Duvvury, H. Gossner, G. Meneghesso, and G. Groeseneken, “Impact of Strain on ESD Robustness of FinFET Devices”, 2008 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, pp. 341-344, December 15-17, 2008.
[8] A. Griffoni, A. Tazzoli, S. Gerardin, E. Simoen, C. Claeys, and G. Meneghesso, “Electrostatic Discharge Effects in Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques”, 2008 Electrical Overstress / Electrostatic Discharge Symposium, Tucson, AZ, USA, pp. 59-66, September 7-12, 2008.
[9] S. Thijs, C. Russ, D. Trémouilles, A. Griffoni, D. Linten, M. Scholz, N. Collaert, R. Rooyackers, M. Jurczak, M. Sawada, T. Nakaei, T. Hasebe, C. Duvvury, H. Gossner, and G. Groeseneken, “Design Methodology of FinFET Devices that Meet IC-Level HBM ESD Targets”, 2008 Electrical Overstress / Electrostatic Discharge Symposium, Tucson, AZ, USA, pp- 295-303, September 7-12, 2008.
[10] A. Griffoni, A. Tazzoli, S. Gerardin, G. Meneghesso, E. Simoen, and C. Claeys, “ESD Sensitivity of 65-nm Fully Depleted SOI MOSFETs With Different Strain-Inducing Techniques”, 2008 International ESD Workshop, Domaine de Pinsolle, Port D’Albret – France, May 12-15, 2008.
[11] A. Griffoni, M. Silvestri, S. Gerardin, G. Meneghesso, A. Paccagnella, B. Kaczer, M. de Potter de ten Broeck, R. Verbeeck, and A. Nackaerts, “Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays”, 8th European Workshop on Radiation Effects on Components and Systems, Jyväskylä, Finland, September 10-12, 2008.
[12] A. Griffoni, S. Gerardin, G. Meneghesso, A. Paccagnella, E. Simoen, S. Put, and C. Claeys, “Microdose and Breakdown Effects Induced by Heavy Ions on sub 20-nm Triple-Gate SOI FETs”, 45th IEEE - Nuclear and Space Radiation Effects Conference - NSREC 2008, Tucson, AZ, USA, July 14-18, 2008.
[13] A. Griffoni, G. Meneghesso, and A. Paccagnella, “Ionizing Radiation Effects on Advanced CMOS Devices and on ESD Protection Structures for CMOS Technology”, RADFAC 2008, Mol - Belgium, March 19, 2008.
[14] A. Griffoni, E. Simoen, N. Collaert, C. Claeys, A. Paccagnella, and G. Meneghesso, “Multi-Gate Devices for the 32-nm Node and Beyond: Advantages and Issues”, 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, Italy, November 2-5, 2008.
[15] A. Griffoni, S. Gerardin, A. Cester, A. Paccagnella, E. Simoen, and C. Claeys, “Effects of Heavy-Ion Strikes on 65-nm Fully Depleted SOI MOSFETs with Strain-Inducing Techniques: New and Old Concerns”,44th Nuclear and Space Radiation Effects Conference - NSREC 2007, Honolulu, Hawaii, USA, July 23-27, 2007.
[16] S. Gerardin, A. Cester, A. Tazzoli, A. Griffoni, G. Meneghesso, and A. Paccagnella, “Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide”, 44th Nuclear and Space Radiation Effects Conference - NSREC 2007, Honolulu, Hawaii, USA, July 23-27, 2007.
[17] S. Gerardin, A. Griffoni, A. Degradation of Static and Dynamic Behavior of CMOS Inverters during Constant and Pulsed Voltage Stress”, 17th European Symposium Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2006), Wuppertal - Germany, October 3-6, 2006.Cester, A. Paccagnella, G. Ghidini, “
Italian journal papers
[18] S. Gerardin, A. Griffoni, A. Tazzoli, G. Meneghesso, and A. Paccagnella, “Electrostatic Discharge Sensitivity of Fully Depleted SOI MOSFETs Struck by Heavy Ions”, LNL Annual Report 2007, pp. 87-88, 2008.
[19] A. Griffoni, S. Gerardin, A. Paccagnella, E. Simoen, and C. Claeys, “Effects of Heavy-Ion Strikes on 65-nm Fully Depleted SOI MOSFETs: New and Old Concerns”, LNL Annual Report 2007, pp. 85-86, 2008.
Papers to be presented
[20] A. Griffoni, S. Thijs, C. Russ, D. Trémouilles, D. Linten, M. Scholz, N. Collaert, L. Witters, G. Meneghesso, and G. Groeseneken, “Next Generation Bulk FinFET Devices and Their Benefits for ESD Robustness”, 2009 Electrical Overstress / Electrostatic Discharge Symposium.
[21] S. Thijs, D. Trémouilles, A. Griffoni, C. Russ, D. Linten, M. Scholz, C. Duvvury, and G. Groeseneken, “Electrical and Thermal Scaling Trends for FinFET ESD Design”, 2009 Electrical Overstress / Electrostatic Discharge Symposium.
[22] S. Thijs, K. Raczkowski, D. Linten, M. Scholz, A. Griffoni, and G. Groeseneken, “CDM and HBM Analysis of ESD Protected 60 GHz Power Amplifier in 45 nm Low-Power Digital CMOS”, 2009 Electrical Overstress / Electrostatic Discharge Symposium.
[23] D. Linten, P. Roussel, M. Scholz, S. Thijs, A. Griffoni, M. Sawada, T. Hasebe, and G. Groeseneken, “Calibration of Very Fast TLP Transients”, 2009 Electrical Overstress / Electrostatic Discharge Symposium.
[24] A. Griffoni, S. Gerardin, P.J. Roussel, A. Ruzza, G. Meneghesso, A. Paccagnella, E. Simoen, and C. Claeys “A Statistical Approach to Microdose Induced Degradation in FinFET Devices”, 46th IEEE - Nuclear and Space Radiation Effects Conference - NSREC 2009.
[25] A. Griffoni, S. Gerardin, A. Ruzza, G. Meneghesso, A. Paccagnella, E. Simoen, and C. Claeys, “Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs”, 10th European Conference on Radiation and Its Effects on Components and Systems - RADECS 2009.
Submitted papers
[26] A. Griffoni, S. Gerardin, G. Meneghesso, A. Paccagnella, E. Simoen, S. Put, and C. Claeys, “Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs”, LNL Annual Report 2008.
[27] A. Griffoni, M. Silvestri, S. Gerardin, G. Meneghesso, A. Paccagnella, B. Kaczer, M. de Potter de ten Broeck, R. Verbeeck, and A. Nackaerts, “Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays”, LNL Annual Report 2008.
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