CV: Electrical Engineering PhD


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Personal information
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Candidate Profile
 Date Submitted:01-08-2008
 Last Modified:01-08-2008 (09:23)
Job information
 Current job:Electrical Engineering PhD
 Employment Term:Permanent
 Relocation:Own country
 Date available:immediately
 Industry:Civil Agencies/International Organizations
 KeywordsRF, microwave
CV

1. PERSONAL INFORMATION

 

 

 

2. PROFESSIONAL QUALIFICATIONS

PhD in Electrical Engineering (in RF/microwave microelectronics area). About 15 years experience in RF, microwave, microelectronics (space and communications related) and semiconductor industry and academics. Author and co-author of 30 journal papers and conference contributions, 6 patents. In 1998 I was awarded New York Academy of Sciences membership. About 5 years managing experience in a small sales company.

 

3. AREAS OF SPECIALISATION AND EXPERIENCE

 

Strong background in RF/microwave Si, GaAs control circuit, devices and components. Experience in design, development and research of RF/microwave switches, detectors, passive power limiters, and etc. based on Si and GaAs pin diodes for communication and radar systems, based on HMIC, waveguide, GaAs MMIC technologies. Also strong background in research of Si and GaAs pin diodes, Schottky diodes. Experience in different microstrip and waveguide passive devices. Familiarity with PC. Experience in FORTRAN, Matlab and other programming languages. Deep experience in computer development of models of RF/microwave control devices, diodes. Familiarity with the microwave, low frequency and DC test equipment. Good writing and communications skills. Experience in individual working and in team environment. Unique combination of academic, engineering and managing experience.

 

 

4. EMPLOYMENT HISTORY

 

02.2000 – 07.2000  Visiting Research Fellow ECE Department of Villanova University,Villanova, PA, USA

From February 2000 to July 2000 I was with the ECE Department of the Villanova University as the foreign researcher under the 6 months grant “CAD Modelling of High Frequency Devices” from the NSF (National Science Foundation, USA). Research was devoted to RF/microwave PIN diode nonlinear high power properties. Advanced PIN diode model was successfully developed and experimentally verified.

1995 – 1999            Executive Director, NTO of the Moscow Power Engineering Institute, Russia

 

From 1995 to 1999 I acted as the Executive Director of the small sales company called NTO. Main areas of responsibility included work with customers and government controlling organizations.

 

1991 – 1997            Researcher, Department of Electron Devices, MPEI (Technical University), Moscow, Russia

 

During 1991-1997 I was involved in academics research with the Electron Devices Department of the MPEI. It was conducted

with several projects from the leading Russian electronics companies devoted to different aspects of advanced RF/microwave control devices – computer simulation, design, experimental verification, etc. Some of the topics were: correlation between DC and RF/microwave parameters of different Si pin diodes; experimental and computer investigation on different GaAs and Si RF/microwave discrete PIN diodes and MMIC based monolithitic RF/microwave switches at low power and high power levels. New concepts of self protected RF/microwave waveguide and microstrip detectors and mixers at cm- and mm-wavebands (using HMIC technology), novel multilayer RF/microwave PIN diode structure and advanced efficient RF/microwave passive power limiters were proposed and successfully investigated. Students’ research and graduate projects supervision was part of her responsibilities.

 

 

 

1985 - 1995             Engineer, Researcher, Special Research Bureau, Moscow, Russia

 

10 years (1985 – 1995) were spent with the Special Research Bureau, Moscow Russia. It is the industry production organization (now - Communications R&D arm of Russian Space Agency) specialized in different communications, space and military electronics systems. She joined the Special Research Bureau as engineer. Later she became researcher. She was involved in several projects (on different stages) devoted to on-board radiometers development. It was connected with RF/Microwave parts from 100 MHz to 50 GHz, mostly concerning passive devices, semiconductor control devices and subassemblies including filters, detectors. Different technologies, mostly HMIC (hybrid microwave integrated circuits), waveguide and coaxial were used.

 

 

 

 

 

5. EDUCATION

 

 

Name and Location

Dates

Major

Subjects

Degree

or other Diploma

 

From

To

 

 

Senior/High

Secondary School

Mathematical School No. 406, Moscow, USSR

1975

1977

Math. Analysis, Algebra, Geometry, Physics, etc.

Certificate of completion

 

College

or

University

Moscow Power Engineering Institute (Technical University), Moscow, USSR

 

1977

1984

Math., Physics, Semiconductor electronics & physics, Microwave, etc.

Engineer in Electrical Engineering, Diploma with honor (combined M.S./B.S. equivalent)

 

 

ACADEMIC QUALIFICATIONS, MEMBERSHIP OF BUSINESS OR PROFESSIONAL ASSOCIATIONS

 

Qualification

Received

Awarded

By

Subject

Length

of Study

Date

 

Candidate of Technical Science (Ph.D. equivalent)

 

New York Academy of Sciences membership

Moscow Power Engineering Institute (Technical University),

 

New York Academy of Sciences

Microelectronics

 

 

 

 

 

1992 – 1996

 

 

 

 

1997

 

 

 

1998

 

 

6. List of theses, patents, publications and other significant work.

 

Journal Articles

 

1.        Drozdovski N., Drozdovskaia L.,Caverly, R., and Quinn M., Modeling the zero and forward bias operation of PIN diodes for high‑frequency applications, Solid‑State Electronics, vol.46, No.11, pp.2001‑2008, November 2002.

2.        N. Drozdovski and L. Drozdovskaia, Microwave control devices based on microstrip hairpin resonators, International Journal of Electronics, vol.89, No.7, pp.575‑582, July 2002

3.        L.M.Drozdovskaia, RF and Microwave Frequency Properties of a Reverse‑Biased Thick Switching p‑i‑n Diode, IEEE Trans. on Microwave Theory and Techniques, vol.49, No.8, pp.1370-1373, August 2001.

4.        L.M.Drozdovskaia, Frequency Properties of a Reverse Biased Thick Switching PIN Diode, Applied Microwave & Wireless Magazine, vol.13, No.2, pp.106-114, February 2001

5.        L. Drozdovskaia and N. Drozdovski, Waveguide passive power limiter based on printed elliptic resonator, International Journal of Electronics, vol.88, No.2, pp.249-254, February 2001

6.        N.V.Drozdovski & L.M.Drozdovskaia, "Microstrip and Waveguide Passive Power Limiters with Simplified Construction," Microwaves and Optoelectronics Journal, vol.1, No.5, pp.14-29, December 1999

7.        L.M.Drozdovskaia & N.V. Drozdovski, A novel microwave passive power limiter, International Journal of Electronics, vol.86, No.6, pp.785-790, June 1999

8.        Lebedev I.V., Drozdovskaia L.M., Drozdovski N.V. & Shnitnikov A.S., Evaluation of the Active Component of the Impedance of PIN diode, Journal of communications technology & electronics. Vol.41, No.3, 1996: pp.291-295

9.        Lebedev I.V., Drozdovskaia L.M. & Shnitnikov A.S., Minimal reverse bias voltage of the high-power pin‑diode switch, Radioelectronics and communications systems. Vol.38, No.10, 1995: p.21

10.     L.M. Drozdovskaia Improved Self-protected Microwave Detector, Electronics Letters, 1995, Vol.31, No8, pp.657-658

11.     I.V. Lebedev, A.S. Snhitnikov, N.V. Drozdovski and L. M. Drozdovskaia, Solid-State Control Devices For mm‑Waveband, Electronics Letters, 1995, Vol.31, No3, pp. 211-212

12.     Lebedev I.V., Drozdovski N.V. & Drozdovskaia L.M., Self-Protected Detector and Mixer, Radiotechnika, 1994, No3, pp.87-89 (in Russian)

13.     Lebedev I.V. & Drozdovskaia L.M., Powerful self-protected microwave detector, Radiotech. Tetradi, 1993, No3, pp.50-53 (in Russian)

 

Conferences Articles

 

1.          N.V.Drozdovski & L.M.Drozdovskaia, “Modeling of Depleted Region in Switching pin‑diode”, Proc. of the International Symposium on Signals, Systems and Electronics, ISSSE'01, July 25‑27, 2001, Tokyo, Japan

2.          L.M. Drozdovskaia, “RF Frequency Properties of a Reverse Biased Thick Switching PIN-Diode”, Proc. of the 2000 IEEE Radio and Wireless Conference, RAWCON’2000, September 10‑13, 2000, Denver, USA, pp.147‑150

3.          R.H. Caverly, N.V. Drozdovski, L.M. Drozdovskaia, and M. Quinn, “SPICE Modeling of Microwave and RF Control Devices”, The 43rd Midwest Symposium on Circuit and Systems, Lansing, USA, August 8-11, 2000, Proceedings of MWSCAS’2000, pp.28-31.

4.          L.M.Drozdovskaia & N.V.Drozdovski “Novel simple microwave passive power limiters”, The 1999 Asia-Pacific Microwave Conference, Singapore, Singapore, November 30 - December 3, 1999, Proceedings of APMC’99, v.3, pp.873‑875

5.          L.M.Drozdovskaia & N.V.Drozdovski “Novel Microstrip Control Devices for Radio Communications Systems”, The 10th International Symposium on Personal, Indoor and Mobile Radio Communications, Osaka, Japan, September 12-15, 1999, Proceedings of PIMRC’99, v.2, pp.666-669

6.          L.M.Drozdovskaia, “A Novel Low-Frequency PIN diode”, The 1999 International Microwave and Optoelectronics Conference, Rio de Janeiro, Brazil, August 9-12, 1999, Proceedings of IMOC’99, pp.19-21


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