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    CV: Electrical Engineering PhD

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    Personal information
     Name:<withheld>
     Age:<withheld>
     Country:<withheld>
     Location:<withheld>
    Contact information
     Email:<withheld>
     Phone:<withheld>
     Mobile:<withheld>
    Candidate Profile
     Date Submitted:01-08-2008
     Last Modified:01-08-2008 (09:23)
    Job information
     Current job:Electrical Engineering PhD
     Employment Term:Permanent
     Relocation:Own country
     Date available:immediately
     Industry:Civil Agencies/International Organizations
     KeywordsRF, microwave
    CV

    1. PERSONAL INFORMATION

     

     

     

    2. PROFESSIONAL QUALIFICATIONS

    PhD in Electrical Engineering (in RF/microwave microelectronics area). About 15 years experience in RF, microwave, microelectronics (space and communications related) and semiconductor industry and academics. Author and co-author of 30 journal papers and conference contributions, 6 patents. In 1998 I was awarded New York Academy of Sciences membership. About 5 years managing experience in a small sales company.

     

    3. AREAS OF SPECIALISATION AND EXPERIENCE

     

    Strong background in RF/microwave Si, GaAs control circuit, devices and components. Experience in design, development and research of RF/microwave switches, detectors, passive power limiters, and etc. based on Si and GaAs pin diodes for communication and radar systems, based on HMIC, waveguide, GaAs MMIC technologies. Also strong background in research of Si and GaAs pin diodes, Schottky diodes. Experience in different microstrip and waveguide passive devices. Familiarity with PC. Experience in FORTRAN, Matlab and other programming languages. Deep experience in computer development of models of RF/microwave control devices, diodes. Familiarity with the microwave, low frequency and DC test equipment. Good writing and communications skills. Experience in individual working and in team environment. Unique combination of academic, engineering and managing experience.

     

     

    4. EMPLOYMENT HISTORY

     

    02.2000 – 07.2000  Visiting Research Fellow ECE Department of Villanova University,Villanova, PA, USA

    From February 2000 to July 2000 I was with the ECE Department of the Villanova University as the foreign researcher under the 6 months grant “CAD Modelling of High Frequency Devices” from the NSF (National Science Foundation, USA). Research was devoted to RF/microwave PIN diode nonlinear high power properties. Advanced PIN diode model was successfully developed and experimentally verified.

    1995 – 1999            Executive Director, NTO of the Moscow Power Engineering Institute, Russia

     

    From 1995 to 1999 I acted as the Executive Director of the small sales company called NTO. Main areas of responsibility included work with customers and government controlling organizations.

     

    1991 – 1997            Researcher, Department of Electron Devices, MPEI (Technical University), Moscow, Russia

     

    During 1991-1997 I was involved in academics research with the Electron Devices Department of the MPEI. It was conducted

    with several projects from the leading Russian electronics companies devoted to different aspects of advanced RF/microwave control devices – computer simulation, design, experimental verification, etc. Some of the topics were: correlation between DC and RF/microwave parameters of different Si pin diodes; experimental and computer investigation on different GaAs and Si RF/microwave discrete PIN diodes and MMIC based monolithitic RF/microwave switches at low power and high power levels. New concepts of self protected RF/microwave waveguide and microstrip detectors and mixers at cm- and mm-wavebands (using HMIC technology), novel multilayer RF/microwave PIN diode structure and advanced efficient RF/microwave passive power limiters were proposed and successfully investigated. Students’ research and graduate projects supervision was part of her responsibilities.

     

     

     

    1985 - 1995             Engineer, Researcher, Special Research Bureau, Moscow, Russia

     

    10 years (1985 – 1995) were spent with the Special Research Bureau, Moscow Russia. It is the industry production organization (now - Communications R&D arm of Russian Space Agency) specialized in different communications, space and military electronics systems. She joined the Special Research Bureau as engineer. Later she became researcher. She was involved in several projects (on different stages) devoted to on-board radiometers development. It was connected with RF/Microwave parts from 100 MHz to 50 GHz, mostly concerning passive devices, semiconductor control devices and subassemblies including filters, detectors. Different technologies, mostly HMIC (hybrid microwave integrated circuits), waveguide and coaxial were used.

     

     

     

     

     

    5. EDUCATION

     

     

    Name and Location

    Dates

    Major

    Subjects

    Degree

    or other Diploma

     

    From

    To

     

     

    Senior/High

    Secondary School

    Mathematical School No. 406, Moscow, USSR

    1975

    1977

    Math. Analysis, Algebra, Geometry, Physics, etc.

    Certificate of completion

     

    College

    or

    University

    Moscow Power Engineering Institute (Technical University), Moscow, USSR

     

    1977

    1984

    Math., Physics, Semiconductor electronics & physics, Microwave, etc.

    Engineer in Electrical Engineering, Diploma with honor (combined M.S./B.S. equivalent)

     

     

    ACADEMIC QUALIFICATIONS, MEMBERSHIP OF BUSINESS OR PROFESSIONAL ASSOCIATIONS

     

    Qualification

    Received

    Awarded

    By

    Subject

    Length

    of Study

    Date

     

    Candidate of Technical Science (Ph.D. equivalent)

     

    New York Academy of Sciences membership

    Moscow Power Engineering Institute (Technical University),

     

    New York Academy of Sciences

    Microelectronics

     

     

     

     

     

    1992 – 1996

     

     

     

     

    1997

     

     

     

    1998

     

     

    6. List of theses, patents, publications and other significant work.

     

    Journal Articles

     

    1.        Drozdovski N., Drozdovskaia L.,Caverly, R., and Quinn M., Modeling the zero and forward bias operation of PIN diodes for high‑frequency applications, Solid‑State Electronics, vol.46, No.11, pp.2001‑2008, November 2002.

    2.        N. Drozdovski and L. Drozdovskaia, Microwave control devices based on microstrip hairpin resonators, International Journal of Electronics, vol.89, No.7, pp.575‑582, July 2002

    3.        L.M.Drozdovskaia, RF and Microwave Frequency Properties of a Reverse‑Biased Thick Switching p‑i‑n Diode, IEEE Trans. on Microwave Theory and Techniques, vol.49, No.8, pp.1370-1373, August 2001.

    4.        L.M.Drozdovskaia, Frequency Properties of a Reverse Biased Thick Switching PIN Diode, Applied Microwave & Wireless Magazine, vol.13, No.2, pp.106-114, February 2001

    5.        L. Drozdovskaia and N. Drozdovski, Waveguide passive power limiter based on printed elliptic resonator, International Journal of Electronics, vol.88, No.2, pp.249-254, February 2001

    6.        N.V.Drozdovski & L.M.Drozdovskaia, "Microstrip and Waveguide Passive Power Limiters with Simplified Construction," Microwaves and Optoelectronics Journal, vol.1, No.5, pp.14-29, December 1999

    7.        L.M.Drozdovskaia & N.V. Drozdovski, A novel microwave passive power limiter, International Journal of Electronics, vol.86, No.6, pp.785-790, June 1999

    8.        Lebedev I.V., Drozdovskaia L.M., Drozdovski N.V. & Shnitnikov A.S., Evaluation of the Active Component of the Impedance of PIN diode, Journal of communications technology & electronics. Vol.41, No.3, 1996: pp.291-295

    9.        Lebedev I.V., Drozdovskaia L.M. & Shnitnikov A.S., Minimal reverse bias voltage of the high-power pin‑diode switch, Radioelectronics and communications systems. Vol.38, No.10, 1995: p.21

    10.     L.M. Drozdovskaia Improved Self-protected Microwave Detector, Electronics Letters, 1995, Vol.31, No8, pp.657-658

    11.     I.V. Lebedev, A.S. Snhitnikov, N.V. Drozdovski and L. M. Drozdovskaia, Solid-State Control Devices For mm‑Waveband, Electronics Letters, 1995, Vol.31, No3, pp. 211-212

    12.     Lebedev I.V., Drozdovski N.V. & Drozdovskaia L.M., Self-Protected Detector and Mixer, Radiotechnika, 1994, No3, pp.87-89 (in Russian)

    13.     Lebedev I.V. & Drozdovskaia L.M., Powerful self-protected microwave detector, Radiotech. Tetradi, 1993, No3, pp.50-53 (in Russian)

     

    Conferences Articles

     

    1.          N.V.Drozdovski & L.M.Drozdovskaia, “Modeling of Depleted Region in Switching pin‑diode”, Proc. of the International Symposium on Signals, Systems and Electronics, ISSSE'01, July 25‑27, 2001, Tokyo, Japan

    2.          L.M. Drozdovskaia, “RF Frequency Properties of a Reverse Biased Thick Switching PIN-Diode”, Proc. of the 2000 IEEE Radio and Wireless Conference, RAWCON’2000, September 10‑13, 2000, Denver, USA, pp.147‑150

    3.          R.H. Caverly, N.V. Drozdovski, L.M. Drozdovskaia, and M. Quinn, “SPICE Modeling of Microwave and RF Control Devices”, The 43rd Midwest Symposium on Circuit and Systems, Lansing, USA, August 8-11, 2000, Proceedings of MWSCAS’2000, pp.28-31.

    4.          L.M.Drozdovskaia & N.V.Drozdovski “Novel simple microwave passive power limiters”, The 1999 Asia-Pacific Microwave Conference, Singapore, Singapore, November 30 - December 3, 1999, Proceedings of APMC’99, v.3, pp.873‑875

    5.          L.M.Drozdovskaia & N.V.Drozdovski “Novel Microstrip Control Devices for Radio Communications Systems”, The 10th International Symposium on Personal, Indoor and Mobile Radio Communications, Osaka, Japan, September 12-15, 1999, Proceedings of PIMRC’99, v.2, pp.666-669

    6.          L.M.Drozdovskaia, “A Novel Low-Frequency PIN diode”, The 1999 International Microwave and Optoelectronics Conference, Rio de Janeiro, Brazil, August 9-12, 1999, Proceedings of IMOC’99, pp.19-21


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