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Wed, 21 Feb 2018 04:29:31 +0000
In spite of all the safeguards, companies must continually monitor traffic on their global networks to detect attempted or successful penetration and take steps to mitigate the impact of security breaches. SpaceNews.com
Tue, 20 Feb 2018 22:02:12 +0000
Bigelow Aerospace has established a space operations subsidiary whose first task will be to study the market for the company's commercial space stations as it grapples with competition from China and NASA. SpaceNews.com
Tue, 20 Feb 2018 19:50:53 +0000
President Trump's 2019 NASA budget would pull the plug on astronomer's No. 1 priority for the next decade. NASA's former astrophysics chief says Congress should keep WFIRST funded. SpaceNews.com
Tue, 20 Feb 2018 08:57:05 +0000
Vector, one of a growing number of companies developing small launch vehicles, plans to carry out its first orbital launch this summer from Alaska. SpaceNews.com
Mon, 19 Feb 2018 22:29:05 +0000
When members of the National Space Council meet this week, they are expected to discuss, among other issues, regulatory reforms intended to promote growth of the commercial spaceflight industry. SpaceNews.com
Mon, 19 Feb 2018 15:06:38 +0000
What exactly will replace SBIRS remains to be seen. Air Force Secretary Heather Wilson suggested the new system will be “simpler” and more survivable to enemy attacks. SpaceNews.com
Mon, 19 Feb 2018 13:44:31 +0000
Air Force leaders say changes in procurement spending are necessary for the military to ensure air and space supremacy. SpaceNews.com
Mon, 19 Feb 2018 10:38:47 +0000
The head of the organization that manages the national laboratory portion of the International Space Station will leave next month as it deals with an uncertain long-term future for the station. SpaceNews.com
Sun, 18 Feb 2018 15:32:36 +0000
Telesat, with one demonstration satellite for its planned broadband satellite constellation in orbit, expects to announce plans for manufacturing the full system in the coming months as it seeks partners to help fund its development. SpaceNews.com
Fri, 16 Feb 2018 21:45:19 +0000
NASA has certified the current version of the SpaceX Falcon 9 to launch some categories of science missions, a milestone needed for the upcoming, but delayed, launch of an astronomy spacecraft. SpaceNews.com
Fri, 16 Feb 2018 19:38:53 +0000
Eutelsat Chief Executive Officer Rodolphe Belmer is taking a contrary view on short-term capacity leases and the explosive growth of video streaming — two disruptive video trends causing angst among satellite operators with substantial television broadcast business. SpaceNews.com
Fri, 16 Feb 2018 15:20:41 +0000
The U.S. Air Force and Aerojet Rocketdyne are working to revise an agreement to support development of the company's AR1 rocket engine, as questions continue about the engine's long-term future. SpaceNews.com
Thu, 15 Feb 2018 23:05:27 +0000
The president of the Canadian Space Agency said he is taking a "wait and see" approach to NASA's plans to end funding of the International Space Station in the mid-2020s, citing the lack of detail. SpaceNews.com
Thu, 15 Feb 2018 22:38:59 +0000
NASA’s topline budget will be flat for the foreseeable future — which means an effective decrease in real dollar funding for the agency. As a result, President Trump may see his moon plans come crashing down to Earth. SpaceNews.com
Thu, 15 Feb 2018 20:09:54 +0000
Satellite hardware and network builder Gilat of Israel, seeking to interest cellular operators in expanding their reach by satellite, is pressing forward with a strategy of building the entire network for them in exchange for multi-year commitments to pay for the service. SpaceNews.com
Thu, 15 Feb 2018 18:33:42 +0000
The Air Force creating a budget line for small launch is a “very good thing for the industry,” said Steve Nixon, vice president of strategic development at Stratolaunch. SpaceNews.com
Thu, 15 Feb 2018 17:31:01 +0000
Fleet operator ViaSat’s newest satellite could lose around 15 percent of its intended throughput due to an antenna problem discovered after launch. SpaceNews.com
Thu, 15 Feb 2018 09:34:06 +0000
A United Nations committee reached agreement last week on nine guidelines intended to reduce the risk of collisions in space and other harmful space activities. SpaceNews.com
Wed, 14 Feb 2018 19:25:22 +0000
Federal Communications Commission Chairman Ajit Pai wants his agency approve SpaceX’s 15-month-old application to serve the U.S. with its proposed megaconstellation. SpaceNews.com
Wed, 14 Feb 2018 18:17:22 +0000
U.S. intelligence report: “Russia and China aim to have nondestructive and destructive counter-space weapons available for use during a potential future conflict.” SpaceNews.com
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    Personal information
     Name:<withheld>
     Age:<withheld>
     Country:<withheld>
     Location:<withheld>
    Contact information
     Email:<withheld>
     Phone:<withheld>
     Mobile:<withheld>
    Candidate Profile
     Date Submitted:09-06-2009
     Last Modified:09-06-2009 (12:38)
    Job information
     Current job:PhD student
     Employment Term:Permanent
     Job location:Anywhere
     Date available:
     Industry:Civil Agencies/International Organizations, Satellite Manufacturers and Subcontractors, Satellite Operators, , , Consulting/Engineering Services
     Keywordsreliability and ESD on advanced CMOS technologies
    CV
    CURRICULUM VITAE
     
    PERSONAL DETAILS
    Date and place of birth:      Mirano, Venice, Italy, March 9, 1982
    Nationality:                          Italian
    Marital Status:                     Single
     
    EDUCATION AND QUALIFICATIONS
    January 2007 – February 2010 (expected)             
                                            Ph.D. student at the Department of Information Engineering (DEI), University of              Padova, Padova, Italy.
                                            Supervisor: Prof. G. Meneghesso.
    January 2008 – May 2009         
                                            Guest Ph.D. student at the Interuniversity Microelectronics Center (IMEC), Leuven,        Belgium, working on the ESD design and characterization of multi-gate FinFET       devices.
                                            Supervisor: Prof. G. Groeseneken.
    July 3, 2006                    “Laurea” degree (equivalent to M.S. degree) summa cum laude in Electronic      Engineering, major Microelectronics, received from the University of Padova,               Padova, Italy.
                                    Title of the thesis: “Reliability of Fully Depleted SOI MOSFETs with Ultra-Thin                Gate Oxide in 65-nm CMOS Technology”.
    September 15, 2004      B.S. degree in Information Engineering received from the University of Padova,                Padova, Italy.
                                    Title of the thesis: “Stochastic Differential Equations”.
    July 2001                        High-school degree as aeronautic expert with a score of 100/100 after 5 years of high-     school courses from the “I.T.I.S. G. Natta” School of Padova, Italy.
     
    RESEARCH INTERESTS
    Electrostatic discharge (ESD) and ionizing radiation effects on advanced CMOS devices.
    ESD                                ESD design and characterization of FinFET devices in both bulk and SOI substrate          technologies and planar fully depleted SOI MOSFETs with ultra-thin silicon body.
    Radiation effects          Microdose effects induced by heavy-ion strikes in planar fully depleted SOI      MOSFETs and SOI FinFET devices and dose enhancement due to interconnects in     deep-submicron MOSFETs exposed to X-rays.
     
    COLLABORATION WITH INDUSTRIES AND RESEARCH CENTERS
    2006 - 2009                     Collaborating with:
    1.        Microelectronics Group of DEI, University of Padova, Padova Italy
    2.        IMEC,  Leuven, Belgium
    3.        Laboratori Nazionali di Legnaro (LNL) of the Istituto Nazionale di Fisica Nucleare (INFN), Padova, Italy.
    4.        Infineon, Munich, Germany.
     
    LANGUAGES SKILLS
    • Italian: mother tongue.
    • English: good. I passed the GRE – General Test and the Trinity testes in 2006 and 2001, respectively.
     
    EXPERIMENTAL SKILLS
    • Optimum knowledge and manual skill of the Transmission Line Pulse (TLP), Human Body Model (HBM), and very fast Transmission Line Pulse (vfTLP) ESD stress systems.
    • Optimum knowledge and manual skill of the heavy-ion beam, X-rays, and g-rays radiation facilities.
     
    COMPUTER SKILLS
    • Good knowledge of P-Spice, H-Spice, Mathlab, MathCad, and Office.
    • Discrete knowledge of Cadence, Python, Java, and Sun and Linux operating systems.
    • Basic knowledge of DESSIS, Sentaurus, and TSUPREM TCAD simulators and LabView.
     
    OTHER SKILLS
    • Optimum knowledge of transistor reliability, advanced transistor characterization techniques, reliability modeling, analog and digital circuit reliability and device physics.
    • I consider myself to be self-directed, pro-active and innovative and to have optimum communication skills and self organization.
    • I consider myself open to learn and investigate new exciting topics.
     
    OTHER
    IEEE student member and member of IEEE Electron Devices Society, IEEE Reliability Society, IEEE Nuclear and Plasma Sciences Society, and ESD Association.
     
    REFERENCES
    References are available on request.
     
    PUBLICATIONS
    International journal papers
    [1]        S. Thijs, D. Trémouilles, C. Russ, A. Griffoni, N. Collaert, R. Rooyackers, D. Linten, M. Scholz, C. Duvvury, H. Gossner, M. Jurczak, and G. Groeseneken, “Characterization and Optimization of Sub-32nm FinFET Devices for ESD Applications”, IEEE Transaction on Electron Devices, vol. 55, no. 12, pp. 3507-3516, December 2008.
    [2]        A. Griffoni, S. Gerardin, G. Meneghesso, A. Paccagnella, E. Simoen, S. Put, and C. Claeys, “Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs”, Transaction on Nuclear Science, vol. 55, no.6, pp. 3182-3188, December 2008.
    [3]        A. Griffoni, M. Silvestri, S. Gerardin, G. Meneghesso, A. Paccagnella, B. Kaczer, M. de Potter de ten Broeck, R. Verbeeck, and A. Nackaerts, “Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays”, in press in IEEE Transaction on Nuclear Science.
    [4]        A. Griffoni, S. Gerardin, A. Cester, A. Paccagnella, E. Simoen, and C. ClaeysEffects of Heavy-Ion Strikes on Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques”, IEEE Transaction on Nuclear Science, vol. 54, no. 6, pp. 2257-2263, December 2007.,
    [5]        S. Gerardin, A. Griffoni, A. Tazzoli, A. Cester, G. Meneghesso, and A. Paccagnella, “Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide”, IEEE Transaction on Nuclear Science, vol. 54, no. 6, pp. 2204-2209, December 2007.
    [6]        S. Gerardin, A. Griffoni, A. Cester, A. Paccagnella, G. Ghidini, “Degradation of Static and Dynamic Behavior of CMOS Inverters during Constant and Pulsed Voltage Stress”, Microelectronics Reliability, vol. 46, no 9-11, pp. 1669-1672, Sept. – Nov. 2006.
    International conference papers
    [7]        A. Griffoni, S. Thijs, C. Russ, D. Trémouilles, M. Scholz, D. Linten, N. Collaert, R. Rooyackers, C. Duvvury, H. Gossner, G. Meneghesso, and G. Groeseneken, “Impact of Strain on ESD Robustness of FinFET Devices”, 2008 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, pp. 341-344, December 15-17, 2008.
    [8]           A. Griffoni, A. Tazzoli, S. Gerardin, E. Simoen, C. Claeys, and G. Meneghesso, “Electrostatic Discharge Effects in Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques”, 2008 Electrical Overstress / Electrostatic Discharge Symposium, Tucson, AZ, USA, pp. 59-66, September 7-12, 2008.
    [9]        S. Thijs, C. Russ, D. Trémouilles, A. Griffoni, D. Linten, M. Scholz, N. Collaert, R. Rooyackers, M. Jurczak, M. Sawada, T. Nakaei, T. Hasebe, C. Duvvury, H. Gossner, and G. Groeseneken, “Design Methodology of FinFET Devices that Meet IC-Level HBM ESD Targets”, 2008 Electrical Overstress / Electrostatic Discharge Symposium, Tucson, AZ, USA, pp- 295-303, September 7-12, 2008.
    [10]    A. Griffoni, A. Tazzoli, S. Gerardin, G. Meneghesso, E. Simoen, and C. Claeys, “ESD Sensitivity of 65-nm Fully Depleted SOI MOSFETs With Different Strain-Inducing Techniques”, 2008 International ESD Workshop, Domaine de Pinsolle, Port D’Albret – France, May 12-15, 2008.
    [11]    A. Griffoni, M. Silvestri, S. Gerardin, G. Meneghesso, A. Paccagnella, B. Kaczer, M. de Potter de ten Broeck, R. Verbeeck, and A. Nackaerts, “Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays”, 8th European Workshop on Radiation Effects on Components and Systems, Jyväskylä, Finland, September 10-12, 2008.
    [12]    A. Griffoni, S. Gerardin, G. Meneghesso, A. Paccagnella, E. Simoen, S. Put, and C. Claeys, “Microdose and Breakdown Effects Induced by Heavy Ions on sub 20-nm Triple-Gate SOI FETs”, 45th IEEE - Nuclear and Space Radiation Effects Conference - NSREC 2008, Tucson, AZ, USA, July 14-18, 2008.
    [13]    A. Griffoni, G. Meneghesso, and A. Paccagnella, “Ionizing Radiation Effects on Advanced CMOS Devices and on ESD Protection Structures for CMOS Technology”, RADFAC 2008, Mol - Belgium, March 19, 2008.
    [14]    A. Griffoni, E. Simoen, N. Collaert, C. Claeys, A. Paccagnella, and G. Meneghesso, “Multi-Gate Devices for the 32-nm Node and Beyond: Advantages and Issues”, 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, Italy, November 2-5, 2008.
    [15]    A. Griffoni, S. Gerardin, A. Cester, A. Paccagnella, E. Simoen, and C. Claeys, “Effects of Heavy-Ion Strikes on 65-nm Fully Depleted SOI MOSFETs with Strain-Inducing Techniques: New and Old Concerns”,44th Nuclear and Space Radiation Effects Conference - NSREC 2007, Honolulu, Hawaii, USA, July 23-27, 2007.
    [16]    S. Gerardin, A. Cester, A. Tazzoli, A. Griffoni, G. Meneghesso, and A. Paccagnella, “Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide”, 44th Nuclear and Space Radiation Effects Conference - NSREC 2007, Honolulu, Hawaii, USA, July 23-27, 2007.
    [17]    S. Gerardin, A. Griffoni, A. Degradation of Static and Dynamic Behavior of CMOS Inverters during Constant and Pulsed Voltage Stress”,  17th European Symposium Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2006), Wuppertal - Germany, October 3-6, 2006.Cester, A. Paccagnella, G. Ghidini, “
    Italian journal papers
    [18]    S. Gerardin, A. Griffoni, A. Tazzoli, G. Meneghesso, and A. Paccagnella, “Electrostatic Discharge Sensitivity of Fully Depleted SOI MOSFETs Struck by Heavy Ions”, LNL Annual Report 2007, pp. 87-88, 2008.
    [19]    A. Griffoni, S. Gerardin, A. Paccagnella, E. Simoen, and C. Claeys, “Effects of Heavy-Ion Strikes on 65-nm Fully Depleted SOI MOSFETs: New and Old Concerns”, LNL Annual Report 2007, pp. 85-86, 2008.
    Papers to be presented
    [20]    A. Griffoni, S. Thijs, C. Russ, D. Trémouilles, D. Linten, M. Scholz, N. Collaert, L. Witters, G. Meneghesso, and G. Groeseneken, “Next Generation Bulk FinFET Devices and Their Benefits for ESD Robustness”, 2009 Electrical Overstress / Electrostatic Discharge Symposium.
    [21]    S. Thijs, D. Trémouilles, A. Griffoni, C. Russ, D. Linten, M. Scholz, C. Duvvury, and G. Groeseneken, “Electrical and Thermal Scaling Trends for FinFET ESD Design”, 2009 Electrical Overstress / Electrostatic Discharge Symposium.
    [22]    S. Thijs, K. Raczkowski, D. Linten, M. Scholz, A. Griffoni, and G. Groeseneken, “CDM and HBM Analysis of ESD Protected 60 GHz Power Amplifier in 45 nm Low-Power Digital CMOS”, 2009 Electrical Overstress / Electrostatic Discharge Symposium.
    [23]    D. Linten, P. Roussel, M. Scholz, S. Thijs, A. Griffoni, M. Sawada, T. Hasebe, and G. Groeseneken, “Calibration of Very Fast TLP Transients”, 2009 Electrical Overstress / Electrostatic Discharge Symposium.
    [24]    A. Griffoni, S. Gerardin, P.J. Roussel, A. Ruzza, G. Meneghesso, A. Paccagnella, E. Simoen, and C. Claeys “A Statistical Approach to Microdose Induced Degradation in FinFET Devices”, 46th IEEE - Nuclear and Space Radiation Effects Conference - NSREC 2009.
    [25]    A. Griffoni, S. Gerardin, A. Ruzza, G. Meneghesso, A. Paccagnella, E. Simoen, and C. Claeys, “Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs”, 10th European Conference on Radiation and Its Effects on Components and Systems - RADECS 2009.
    Submitted papers
    [26]    A. Griffoni, S. Gerardin, G. Meneghesso, A. Paccagnella, E. Simoen, S. Put, and C. Claeys, “Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs”, LNL Annual Report 2008.
    [27]        A. Griffoni, M. Silvestri, S. Gerardin, G. Meneghesso, A. Paccagnella, B. Kaczer, M. de Potter de ten Broeck, R. Verbeeck, and A. Nackaerts, “Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays”, LNL Annual Report 2008.
     


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