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  • CV: Radiation effects engineer

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    Personal information
     Name:<withheld>
     Age:<withheld>
     Country:<withheld>
     Location:<withheld>
    Contact information
     Email:<withheld>
     Phone:<withheld>
     Mobile:<withheld>
    Candidate Profile
     Date Submitted:28-02-2011
     Last Modified:13-03-2011 (07:42)
    Job information
     Current job:Radiation effects engineer
     Employment Term:Permanent
     Job location:Anywhere
     Date available:
     Industry:Civil Agencies/International Organizations, Satellite Manufacturers and Subcontractors, Satellite Operators, , , Launch Systems, Consulting/Engineering Services
     Keywords- Microprobe measurement systems - Transistor characterization techniques - Total ionizing dose effects in advanced CMOS technologies - Single Event Effects in CMOS devices - Heavy-ion, X-ray, and Proton irradiation facilities - Ultra-thin dielectric
    CV

    CURRICULUM VITAE

     

     

    Personal Information

     

    Nationality

    Italian

    Date of birth

    10th September 1979

    Gender

    Male

     

     

     

    Relevant work experiences

     

    Position

    Consultant - Radiation effects engineer

    Company

    ALTRAN Italia SpA

    Location

    Consultant at Thales Alenia Space Italia, Turin, Italy

    Date

    December 2010 – present

    Main activities

    §  Radiation effects on electronics and circuits

    §  Total ionizing dose and single event effects calculations

    §  Space radiation environment

    §  Radiation analyses

    §  Radiation shielding materials

    §  Radiation transport simulations

     

     

    Position

    Trainee - Radiation effects engineer

    Company

    Thales Alenia Space Italia - Space Environment & Habitat Unit

    Location

    Turin, Italy

    Date

    May 2010 – November 2010

    Main activities

    §  Permanent Multi-purpose Module (PMM) radiation analysis

    §  Support to BepiColombo and ExoMars radiation analysis

    §  Geant4 based simulations (GRAS, SSAT, MULASSIS)

    §  Research activity on Habitat Protection Systems (HPS)

    §  Support to FP7 European Space call: Active radiation shielding

     

     

    Position

    Visiting Graduate Student Researcher

    Date

    October 2008 – April 2009

    Location

    Radiation Effect and Reliability Group,

    Vanderbilt University, Nashville, Tennessee, USA

    Advisor

    Prof. Ron Schrimpf

    Activities

    §  Monte Carlosimulations of GaN HEMTs

    §  Study of the defects and reliability of GaN material

    §  Basics of ab-initio total-energy calculations

     

     

    Position

    Visiting Student

    Date

    June 2006

    Location

    CERN Microelectronics Group, Geneva, Switzerland

    Advisor

    Dr. Federico Faccio

    Activities

    X-ray experiments on 130-nm CMOS transistors

     

    Education

     

     

    Ph.D.Schoolin Information Engineering

    Date

    January 2007 – February 2010

    Location

    DEI - University of Padova, Italy

    Advisor

    Prof. Alessandro Paccagnella, DEI, Italy

    Co-advisor

    Prof. Ron Schrimpf – Vanderbilt University, USA

    Dissertation

    Ageing and ionizing radiation synergetic effects in deep-submicron CMOS technologies.

     

     

     

    2nd Laurea Degree in Electronics Engineering

    Major Microelectronics (M.Sc. equivalent)

    Date

    23rd October 2006

    Location

    DEI - University of Padova, Italy, CERN - Geneva, Switzerland

    Advisor

    Prof. Alessandro Paccagnella

    Dissertation

    Total ionizing dose effects in 130-nm CMOS transistors for the front-end electronics at the SLHC

     

     

     

    1st Laurea Degree in Electronics Engineering

    Major industrial electronics (B.Sc. equivalent)

    Date

    15th September 2003

    Location

    University of Padova, Italy

    Advisor

    Prof. Simone Buso

    Dissertation

    1kW digitally controlled motor-generator

     

     

    Attended courses

     

    Date

    26th – 30th March 2007

    Location

    Legnaro National Laboratories – INFN, Italy

    Topic

    “Detectors and Electronics for High Energy Physics, Astrophysics and Space Applications”

     

     

    Date

    19th – 21th March 2007

    Location

    CERN, Geneva, Switzerland

    Topic

    “Common ATLAS/CMS Workshop on Electronics for the SLHC”

     

    Date

    10th September 2007

    Location

    Dueville, France

    Topic

    Short Course of the 9th RADECS conference

    “Radiation effects, from material to system: a multi-scale approach”

     

     

    Date

    14th July 2008

    Location

    Tucson, Arizona, USA

    Topic

    Short Course of the 2008 NSREC conference

    “Soft Errors: From the Ground Up”

     

     

    Date

    3rd April 2009

    Location

    Nashville, Tennesse, USA

    Topic

    “Recent Advances in Material Physics”

    Date

    20th July 2009

    Location

    Quebec city, Canada

    Topic

    Short Course of the 2009 NSREC conference

    “Selection of Integrated Circuits for Space Systems”

     

     

    Date

    14th September 2009

    Location

    Bruges, Belgium

    Topic

    Short Course of the 2009 RADECS conference

    “Towards modeling of radiation effects in nano-scale systems”

     

     

    Research interests

     

     

    §  Radiation effects on deep submicron CMOS devices

    §  Ultra-thin CMOS dielectric reliability

    §  Reliability and radiation effects on GaN HEMT

    §  TCAD device simulations

    §  Monte Carlo radiation transport simulations

    §  Radiation countermeasures

     

    Languages

     

    Mother tongue

    Italian

     

    Other language

     

    English

    Understanding

    Good

    Writing

    Good

    Speaking

    Good

    Certificates

    GRE – General Test on 18th September 2006

     

    Additional skills

     

    Experimental

    §  Microprobe measurement systems

    §  Transistor characterization techniques

    §  Irradiation facilities and tests

     

     

    Computer Tools

    §  G4-based MULASSIS, GRAS, SSAT

    §  TCAD DESSIS/Sentaurus

    §  H/P-Spice

    §  VHDL

    §  Cadence

    §  C++

    §  MathCad/Matlab

    §  Win and Unix platforms

     

     

    Others

    §  IEEE Member

    §  IEEE Electron Devices Society member

    §  IEEE Nuclear and Plasma Sciences Society member

    §  IEEE Nuclear and Space Radiation Effects Conference reviewer

     

     

    Conference contributions

     

    1)      L. Gonella, M. Silvestri, S. Gerardin on behalf of DACEL – CERN collaboration, “Total Ionizing Dose Effects in 130-nm commercial CMOS technologies for HEP experiments”,Vertex2006 workshop, Perugia, Italy.

     

    2)      M. Silvestri, S. Gerardin, A. Paccagnella, F. Faccio, L. Gonella, D. Pantano, V. Re, M. Manghisoni, L. Ratti, A. Ranieri, “Channel Hot Carrier Stress on Irradiated 130-nm  MOSFETs: Impact of Bias Conditions During X-ray Exposure”, 9th European Conference on Radiation and Its Effects on Components and Systems (RADECS) 2007.

     

    3)      M. Silvestri, S. Gerardin, A. Paccagnella, F. Faccio, “Degradation induced by X-ray irradiation and Channel Hot Carrier Stresses in 130-nm MOSFETs With Enclosed Layout”, 2008 IEEE Nuclear and Space Radiation Effects Conference (NSREC).

     

    4)      M. Silvestri, S. Gerardin, A. Paccagnella, G. Ghidini, “Gate Rupture in Ultra-thin Gate Oxides Irradiated with Heavy Ions”, 8th European Workshop on Radiation and Its Effects on Components and Systems (RADECS) 2008.

     

    5)      A. Griffoni, M. Silvestri,S. Gerardin,G. Meneghesso, A. Paccagnella, B. Kaczer, Muriel de Potter de ten Broeck, R. Verbeeck, and A. Nackaerts “Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays”, 8th European Workshop on Radiation and Its Effects on Components and Systems (RADECS) 2008.

     

    6)      Y. S. Puzyrev, M. J. Beck, B. Tuttle, M. Silvestri,R. D. Schrimpf, D. M. Fleetwood, S.T. Pantelides, “Interaction of hydrogen with defects in GaN”, Applied Physics Symposium, March 2009.

     

    7)      Aditya Kalavagunta,, Matthew J. Beck, Sriram Dixit, Ronald D. Schrimpf , Robert Reed, Daniel M. Fleetwood, Likun Shen, Umesh K. Mishra, “Dose Impact of Proton Irradiation-Induced Bulk Defects on Gate-lag in GaN HEMTs”, 2009 IEEE Nuclear and Space Radiation Effects Conference (NSREC).

     

    8)      M. Silvestri, S. Gerardin, F. Faccio, R. D. Schrimpf, D. M. Fleetwood, andA. Paccagnella,  “The Role of Irradiation Bias on the Time Dependent Dielectric Breakdown of 130-nm MOSFETs Exposed to X-rays”, 2009 IEEE Nuclear and Space Radiation Effects Conference (NSREC).

     

    9)      M. Silvestri, S. Gerardin, F. Faccio, A. Paccagnella, “Single Event Gate Rupture in 130-nm CMOS Transistor Arrays Subjected to X-ray Irradiation”, 10th European Conference on Radiation and Its Effects on Components and Systems (RADECS) 2009.

     

    10)  E. Tracino, M. Silvestri, C. Lobascio, R. Destefanis, V. Guarnieri, M. Briccarello, M. Belluco, “Space Radiation Shielding for Human Mission: Materials and Concepts”, 15th Workshop on Radiation Monitoring for the International Space Station (WRMISS) 2010.

     

    Awards:

    RADECS 2007 Outstanding paper

    M. Silvestri, S. Gerardin, A. Paccagnella, F. Faccio, L. Gonella, D. Pantano, V. Re, M. Manghisoni, L. Ratti, A. Ranieri, “Channel Hot Carrier Stress on Irradiated 130-nm  MOSFETs: Impact of Bias Conditions During X-ray Exposure”.

     

    Publications

    International Journals

    1)      L. Gonella, F. Faccio, M. Silvestri, S. Gerardin, D. Pantano,V. Re, M. Manghisoni, A. Ranieri, “Total Ionizing Dose Effects in 130-nm commercial CMOS technologies for HEP experiments”,Nucl. Instr. And Meth. A, vol. 582, pp. 750-754, 2007.

     

    2)      M. Silvestri, S. Gerardin, A. Paccagnella, F. Faccio, L. Gonella, “Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs”,  Transactions on Nuclear Science, vol.55, n° 4, pp. 1960-1967, August 2008.

     

    3)      M. Silvestri, S. Gerardin, A. Paccagnella, F. Faccio, “Degradation induced by X-ray irradiation and Channel Hot Carrier Stresses in 130-nm MOSFETs With Enclosed Layout”, Transactions on Nuclear Science, vol. 55, n° 6, pp. 3216-3223, December 2008. 

     

    4)      M. Silvestri, S. Gerardin, A. Paccagnella, G. Ghidini, “Gate Rupture in Ultra-thin Gate Oxides Irradiated with Heavy Ions”, Transactions on Nuclear Science, vol.56, n° 4, pp. 1964-1970, August 2009. 

     

    5)      Alessio Griffoni, ,Simone Gerardin,Gaudenzio Meneghesso, Alessandro Paccagnella, Ben Kaczer, Muriel de Potter de ten Broeck, Rita Verbeeck, and Axel Nackaerts “Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays”, Transactions on Nuclear Science, vol. 56, no. 4, pp. 2205 – 2212, August 2009.

     

    6)      Aditya Kalavagunta, , Matthew J. Beck, Sriram Dixit, Ronald D. Schrimpf , Robert Reed, Daniel M. Fleetwood, Likun Shen, Umesh K. Mishra, “Dose Impact of Proton Irradiation-Induced Bulk Defects on Gate-lag in GaN HEMTs”, Transactions on Nuclear Science, vol.56, n° 6, pp. 3192-3195, December 2009.

     

    7)      M. Silvestri, S. Gerardin, F. Faccio, R. D. Schrimpf, D. M. Fleetwood, andA. Paccagnella,  “The Role of Irradiation Bias on the Time Dependent Dielectric Breakdown of 130-nm MOSFETs Exposed to X-rays”, Transactions on Nuclear Science, vol.56, n° 6, pp. 3244-3249, December 2009. 

     

    8)      M. Silvestri, S. Gerardin, F. Faccio, A. Paccagnella, “Single Event Gate Rupture in 130-nm CMOS Transistor Arrays Subjected to X-ray Irradiation”, Transactions on Nuclear Science, vol.57, n° 4, August 2010.

     

     


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