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CV: Radiation effects engineer
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Date Submitted: Last Modified: Current job: Employment Term: Job location: Date available: Industry: Keywords|
CURRICULUM VITAE
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Personal Information
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Nationality |
Italian |
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Date of birth |
10th September 1979 |
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Gender |
Male
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Relevant work experiences
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Position |
Consultant - Radiation effects engineer |
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Company |
ALTRAN Italia SpA |
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Location |
Consultant at Thales Alenia Space Italia, Turin, Italy |
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Date |
December 2010 – present |
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Main activities |
§ Radiation effects on electronics and circuits § Total ionizing dose and single event effects calculations § Space radiation environment § Radiation analyses § Radiation shielding materials § Radiation transport simulations |
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Position |
Trainee - Radiation effects engineer |
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Company |
Thales Alenia Space Italia - Space Environment & Habitat Unit |
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Location |
Turin, Italy |
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Date |
May 2010 – November 2010 |
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Main activities |
§ Permanent Multi-purpose Module (PMM) radiation analysis § Support to BepiColombo and ExoMars radiation analysis § Geant4 based simulations (GRAS, SSAT, MULASSIS) § Research activity on Habitat Protection Systems (HPS) § Support to FP7 European Space call: Active radiation shielding |
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Position |
Visiting Graduate Student Researcher |
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Date |
October 2008 – April 2009 |
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Location |
Radiation Effect and Reliability Group, Vanderbilt University, Nashville, Tennessee, USA |
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Advisor |
Prof. Ron Schrimpf |
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Activities |
§ Monte Carlosimulations of GaN HEMTs § Study of the defects and reliability of GaN material § Basics of ab-initio total-energy calculations |
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Position |
Visiting Student |
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Date |
June 2006 |
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Location |
CERN Microelectronics Group, Geneva, Switzerland |
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Advisor |
Dr. Federico Faccio |
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Activities |
X-ray experiments on 130-nm CMOS transistors |
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Education |
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Ph.D.Schoolin Information Engineering |
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Date |
January 2007 – February 2010 |
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Location |
DEI - University of Padova, Italy |
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Advisor |
Prof. Alessandro Paccagnella, DEI, Italy |
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Co-advisor |
Prof. Ron Schrimpf – Vanderbilt University, USA |
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Dissertation |
Ageing and ionizing radiation synergetic effects in deep-submicron CMOS technologies. |
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2nd Laurea Degree in Electronics Engineering Major Microelectronics (M.Sc. equivalent) |
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Date |
23rd October 2006 |
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Location |
DEI - University of Padova, Italy, CERN - Geneva, Switzerland |
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Advisor |
Prof. Alessandro Paccagnella |
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Dissertation |
Total ionizing dose effects in 130-nm CMOS transistors for the front-end electronics at the SLHC |
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1st Laurea Degree in Electronics Engineering Major industrial electronics (B.Sc. equivalent) |
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Date |
15th September 2003 |
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Location |
University of Padova, Italy |
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Advisor |
Prof. Simone Buso |
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Dissertation |
1kW digitally controlled motor-generator |
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Attended courses |
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Date |
26th – 30th March 2007 |
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Location |
Legnaro National Laboratories – INFN, Italy |
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Topic |
“Detectors and Electronics for High Energy Physics, Astrophysics and Space Applications” |
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Date |
19th – 21th March 2007 |
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Location |
CERN, Geneva, Switzerland |
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Topic |
“Common ATLAS/CMS Workshop on Electronics for the SLHC”
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Date |
10th September 2007 |
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Location |
Dueville, France |
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Topic |
Short Course of the 9th RADECS conference “Radiation effects, from material to system: a multi-scale approach” |
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Date |
14th July 2008 |
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Location |
Tucson, Arizona, USA |
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Topic |
Short Course of the 2008 NSREC conference “Soft Errors: From the Ground Up” |
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Date |
3rd April 2009 |
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Location |
Nashville, Tennesse, USA |
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Topic |
“Recent Advances in Material Physics” |
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Date |
20th July 2009 |
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Location |
Quebec city, Canada |
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Topic |
Short Course of the 2009 NSREC conference “Selection of Integrated Circuits for Space Systems” |
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Date |
14th September 2009 |
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Location |
Bruges, Belgium |
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Topic |
Short Course of the 2009 RADECS conference “Towards modeling of radiation effects in nano-scale systems” |
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Research interests |
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§ Radiation effects on deep submicron CMOS devices § Ultra-thin CMOS dielectric reliability § Reliability and radiation effects on GaN HEMT § TCAD device simulations § Monte Carlo radiation transport simulations § Radiation countermeasures |
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Languages |
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Mother tongue |
Italian |
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Other language |
English |
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Understanding |
Good |
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Writing |
Good |
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Speaking |
Good |
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Certificates |
GRE – General Test on 18th September 2006 |
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Additional skills |
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Experimental |
§ Microprobe measurement systems § Transistor characterization techniques § Irradiation facilities and tests |
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Computer Tools |
§ G4-based MULASSIS, GRAS, SSAT § TCAD DESSIS/Sentaurus § H/P-Spice § VHDL § Cadence § C++ § MathCad/Matlab § Win and Unix platforms |
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Others |
§ IEEE Member § IEEE Electron Devices Society member § IEEE Nuclear and Plasma Sciences Society member § IEEE Nuclear and Space Radiation Effects Conference reviewer |
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Conference contributions
1) L. Gonella, M. Silvestri, S. Gerardin on behalf of DACEL – CERN collaboration, “Total Ionizing Dose Effects in 130-nm commercial CMOS technologies for HEP experiments”,Vertex2006 workshop, Perugia, Italy.
2) M. Silvestri, S. Gerardin, A. Paccagnella, F. Faccio, L. Gonella, D. Pantano, V. Re, M. Manghisoni, L. Ratti, A. Ranieri, “Channel Hot Carrier Stress on Irradiated 130-nm MOSFETs: Impact of Bias Conditions During X-ray Exposure”, 9th European Conference on Radiation and Its Effects on Components and Systems (RADECS) 2007.
3) M. Silvestri, S. Gerardin, A. Paccagnella, F. Faccio, “Degradation induced by X-ray irradiation and Channel Hot Carrier Stresses in 130-nm MOSFETs With Enclosed Layout”, 2008 IEEE Nuclear and Space Radiation Effects Conference (NSREC).
4) M. Silvestri, S. Gerardin, A. Paccagnella, G. Ghidini, “Gate Rupture in Ultra-thin Gate Oxides Irradiated with Heavy Ions”, 8th European Workshop on Radiation and Its Effects on Components and Systems (RADECS) 2008.
5) A. Griffoni, M. Silvestri,S. Gerardin,G. Meneghesso, A. Paccagnella, B. Kaczer, Muriel de Potter de ten Broeck, R. Verbeeck, and A. Nackaerts “Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays”, 8th European Workshop on Radiation and Its Effects on Components and Systems (RADECS) 2008.
6) Y. S. Puzyrev, M. J. Beck, B. Tuttle, M. Silvestri,R. D. Schrimpf, D. M. Fleetwood, S.T. Pantelides, “Interaction of hydrogen with defects in GaN”, Applied Physics Symposium, March 2009.
7) Aditya Kalavagunta,, Matthew J. Beck, Sriram Dixit, Ronald D. Schrimpf , Robert Reed, Daniel M. Fleetwood, Likun Shen, Umesh K. Mishra, “Dose Impact of Proton Irradiation-Induced Bulk Defects on Gate-lag in GaN HEMTs”, 2009 IEEE Nuclear and Space Radiation Effects Conference (NSREC).
8) M. Silvestri, S. Gerardin, F. Faccio, R. D. Schrimpf, D. M. Fleetwood, andA. Paccagnella, “The Role of Irradiation Bias on the Time Dependent Dielectric Breakdown of 130-nm MOSFETs Exposed to X-rays”, 2009 IEEE Nuclear and Space Radiation Effects Conference (NSREC).
9) M. Silvestri, S. Gerardin, F. Faccio, A. Paccagnella, “Single Event Gate Rupture in 130-nm CMOS Transistor Arrays Subjected to X-ray Irradiation”, 10th European Conference on Radiation and Its Effects on Components and Systems (RADECS) 2009.
10) E. Tracino, M. Silvestri, C. Lobascio, R. Destefanis, V. Guarnieri, M. Briccarello, M. Belluco, “Space Radiation Shielding for Human Mission: Materials and Concepts”, 15th Workshop on Radiation Monitoring for the International Space Station (WRMISS) 2010.
Awards: RADECS 2007 Outstanding paper M. Silvestri, S. Gerardin, A. Paccagnella, F. Faccio, L. Gonella, D. Pantano, V. Re, M. Manghisoni, L. Ratti, A. Ranieri, “Channel Hot Carrier Stress on Irradiated 130-nm MOSFETs: Impact of Bias Conditions During X-ray Exposure”.
Publications International Journals 1) L. Gonella, F. Faccio, M. Silvestri, S. Gerardin, D. Pantano,V. Re, M. Manghisoni, A. Ranieri, “Total Ionizing Dose Effects in 130-nm commercial CMOS technologies for HEP experiments”,Nucl. Instr. And Meth. A, vol. 582, pp. 750-754, 2007.
2) M. Silvestri, S. Gerardin, A. Paccagnella, F. Faccio, L. Gonella, “Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs”, Transactions on Nuclear Science, vol.55, n° 4, pp. 1960-1967, August 2008.
3) M. Silvestri, S. Gerardin, A. Paccagnella, F. Faccio, “Degradation induced by X-ray irradiation and Channel Hot Carrier Stresses in 130-nm MOSFETs With Enclosed Layout”, Transactions on Nuclear Science, vol. 55, n° 6, pp. 3216-3223, December 2008.
4) M. Silvestri, S. Gerardin, A. Paccagnella, G. Ghidini, “Gate Rupture in Ultra-thin Gate Oxides Irradiated with Heavy Ions”, Transactions on Nuclear Science, vol.56, n° 4, pp. 1964-1970, August 2009.
5) Alessio Griffoni, ,Simone Gerardin,Gaudenzio Meneghesso, Alessandro Paccagnella, Ben Kaczer, Muriel de Potter de ten Broeck, Rita Verbeeck, and Axel Nackaerts “Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays”, Transactions on Nuclear Science, vol. 56, no. 4, pp. 2205 – 2212, August 2009.
6) Aditya Kalavagunta, , Matthew J. Beck, Sriram Dixit, Ronald D. Schrimpf , Robert Reed, Daniel M. Fleetwood, Likun Shen, Umesh K. Mishra, “Dose Impact of Proton Irradiation-Induced Bulk Defects on Gate-lag in GaN HEMTs”, Transactions on Nuclear Science, vol.56, n° 6, pp. 3192-3195, December 2009.
7) M. Silvestri, S. Gerardin, F. Faccio, R. D. Schrimpf, D. M. Fleetwood, andA. Paccagnella, “The Role of Irradiation Bias on the Time Dependent Dielectric Breakdown of 130-nm MOSFETs Exposed to X-rays”, Transactions on Nuclear Science, vol.56, n° 6, pp. 3244-3249, December 2009.
8) M. Silvestri, S. Gerardin, F. Faccio, A. Paccagnella, “Single Event Gate Rupture in 130-nm CMOS Transistor Arrays Subjected to X-ray Irradiation”, Transactions on Nuclear Science, vol.57, n° 4, August 2010. |
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