Aerospace Engineer − Apr 2011 to present
Electrical Engineering and Flight Data Systems Division, code 561
NASA Goddard Space Flight Center, Greenbelt, MD 20771
Sr. Systems Engineer − Dec 2007 to Apr 2011
MEI Technologies Inc., c.o. NASA Goddard Space Flight Center, Greenbelt, MD 20771
· Radiation lead for the Joint Polar Satellite Systems program
§ Determined origins of on-orbit anomalies that lead to the implementation of mitigations for JPSS-1 and subsequent JPSS spacecrafts
§ Discovered and replaced several parts with weak radiation tolerance, leading to improvement of system reliability and mission assurance; one case lead to center-wide alert for the usage of the part in NASA projects
§ Provide expertise of radiation effects on electronic components, including total-ionizing dose, single-event effect, and displacement damage effect
§ Derived mission ionizing radiation environment specifications using simulation tools (SPENVIS, NOVICE, etc.)
§ Oversight of contractors and sub-contractors radiation assurance programs (four prime contractors and over 20 different sub-contractors)
§ Implement test guidelines and requirements
§ Manage team of test engineers and technicians for testing using heavy-ions, protons, pulsed-laser, and 60Co gamma rays
§ Calculate upset error rate using simulation tools such as Cosmic Ray Effects on Micro-Electronics(CRÈME-96)
§ Evaluate Worst Case Analysis
· Principal investigator of radiation reliability of non-volatile memories
§ Coauthor of NASA radiation test guideline of advanced non-volatile memories
§ Published first ever results of single-event effect performance of a production-level resistive memory
· Principal investigator of enhanced low dose rate sensitivity (ELDRS) project
§ Only project to comprehensively evaluate the ELDRS response of bipolar transistors and integrated circuit devices
§ Findings impacted the radiation assurance program of the community: ELDRS in bipolar transistors are now considered for part control programs
· Principal investigator of radiation performance of linear regulators and point-of-load regulators
§ Published first results of temperature effects on single-event transients in linear devices
§ Research findings and test results key to qualification of radiation-hardened products
· NASA performance award, 2012
· Outstanding conference paper award coauthor, “Mechanisms and Temperature Dependence of Single Event Latchup Observed in a CMOS Readout Integrated Circuit from 16 – 300 K,”2010 Nuclear Space Radiation Effects Conference (NSREC), Quebec City, Quebec, Canada
· Outstanding data workshop paper award coauthor, “Single Event Effects Compendium of Candidate Spacecraft Electronics for NASA,” 2009, 2010, and 2011 NSREC
· Master of Science in Electrical Engineering– Aug 2005 to Dec 2007
Vanderbilt University, Nashville TN 37235
Thesis title – “Total Dose Irradiation Effects on Silicon and Germanium MOS Capacitors with Alternative Gate Dielectrics” (Advisor: Ronald Schrimpf)
· Bachelor of Engineering in Electrical Engineering and Mathematics– Aug 2001 to May 2005
Vanderbilt University, Nashville TN 37235
Keithley 4200 Parametric Analyzer, Agilent 4156 Parametric Analyzer, TRIAD TCII-1200IC and TCII-1333ST memory testers (DDR2/DDR3 and Flash IC chips and modules), 10 KeV ARACOR x-ray irradiator, KNS 4524AD digital wire bonder, Tektronics digital oscilloscope (various models)
§ Software/simulation tools:
CRÈME), Tanner S-edit, L-edit and T-spice (VLSI layout, schematic, and circuit simulation tools), TCAD (semiconductor device simulation tool), C++, LabVIEW
Journals and Conference Proceedings
§ D. Chen et al., “Evaluation of enhanced low dose rate sensitivity in discrete bipolar junction transistors,” 2012 Radiation Effects Data Workshop proceedings, pp. 1 – 7.
§ D. Chen et al., “Enhanced low dose rate sensitivity at ultra-low dose rates,” IEEE Trans. Nucl. Sci., vol. 58, no. 6, part 1, pp. 2983 - 2990, Dec. 2011.
§ T. Oldham et al., “Effect of Radiation Exposure on the Retention of Commercial NAND Flash Memory,” IEEE Trans. Nucl. Sci., vol. 58, no. 6, part 1, pp. 2904 - 2910, Dec. 2011.
§ D. Chen et al., “The effects of ELDRS at ultra-low dose rates,” 2010 Radiation Effects Data Workshop proceedings.
§ D. Chen et al., “Radiation performance of commercial SiGe HBT BiCMOS high speed operational amplifiers,” 2010 Radiation Effects Data Workshop proceedings.
§ C. Marshal et al., “Mechanisms and Temperature Dependence of Single Event Latchup Observed in a CMOS Readout Integrated Circuit from 16 – 300 K,” IEEE Trans. on Nucl. Sci., vol. 57, no. 6, pp. 3078 – 3086, Dec. 2010.
§ D. Chen et al., “The effects of elevated temperature on pulsed-laser-induced single event transients in analog devices,” IEEE Trans. on Nucl. Sci., vol. 56, no. 6, pp. 3138 – 3144, Dec. 2009.
§ M. O’Bryan et al., “Recent Single Event Effects Compendium of Candidate Electronics for NASA Space Systems,” Radiation Effects Data Workshop proceedings, 2009, 2010, 2011, 2012, and 2013.
§ D. Cochran et al., “Recent Total Ionizing Dose and Displacement Damage Compendium of Candidate Electronics for NASA Space Systems,”Radiation Effects Data Workshop proceedings, 2009, 2010, 2011, 2012, and 2013.
§ D. Chen et al., “Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors,” IEEE Tran. On Nucl Sci., vol. 54, no. 6, pp. 1931 – 1937, Dec. 2007.
§ D. Chen et al., “Total dose response of Ge MOS capacitors with HfO2/Dy2O3 gate stacks,” IEEE Trans. on Nucl. Sci., vol. 54, no. 4, pp. 971 – 974, Aug. 2007.
§ “Single-event effect performance of a commercial ReRAM,” to be presented at the Single-Event Effect Symposium and Military and Aerospace Programmable Logic Devices (MAPLD) Workshop, La Jolla, CA 2014.
§ “Functional interrupts and destructive failures from single-event testing of point-of-load devices,” presented at the Nuclear and Space Radiation Effects Conference, San Francisco, CA, July 2013.
§ “Radiation qualification of flash memories,” presented at the NASA Electronics Technology Workshop, June 11-12, 2013.
§ “Point-of-load devices for space,” presented at the NASA Electronics Technology Workshop, June 13, 2013.
§ “Enhanced low dose rate sensitivity at ultra-low dose rates,” presented at the Nuclear and Space Radiation Effects Conference, Las Vegas, NV, July 2011.
§ “The effects of elevated temperature on pulsed-laser-induced single event transients in analog devices,” presented at the Nuclear and Space Radiation Effects Conference, Quebec City, Quebec, July 2009.
§ ““Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors,” presented at the Nuclear and Space Radiation Effects Conference, Honolulu, HI, July 2007.
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