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Tue, 17 Oct 2017 00:00:00 +0100
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Tue, 17 Oct 2017 00:00:00 +0100
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Fri, 13 Oct 2017 10:55:00 +0100
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Fri, 13 Oct 2017 00:00:00 +0100
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Fri, 13 Oct 2017 00:00:00 +0100
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Thu, 12 Oct 2017 08:50:00 +0100
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Tue, 10 Oct 2017 13:32:00 +0100
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Tue, 10 Oct 2017 13:00:00 +0100
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Mon, 9 Oct 2017 16:30:00 +0100
With four days to liftoff, the next Sentinel satellite is now on the launch pad at the Plesetsk Cosmodrome in northern Russia. The rocket will be fuelled two days before launch, set for Friday at 09:27 GMT (11:27 CEST). The Sentinel-5P satellite has been at the cosmodrome since early September going through a series of tests and being readied for the big day. After being sealed from view in the rocket fairing last week, it was rolled out to the launch pad on Saturday. "This point in any...
Mon, 9 Oct 2017 15:00:00 +0100
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Mon, 9 Oct 2017 12:03:00 +0100
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Thu, 5 Oct 2017 00:00:00 +0100
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Wed, 4 Oct 2017 14:30:00 +0100
As preparations for the launch of Sentinel-5P continue on track, the team at Russia's Plesetsk site has bid farewell to the satellite as it was sealed from view in the Rockot fairing. Liftoff is set for 13 October at 09:27 GMT (11:27 CEST). Since its arrival at the launch site at the beginning of September, Sentinel-5P has been through a series of stringent tests to confirm there was no damage during the flight from the UK. These tests have made sure that everything is in good working orde...
Wed, 4 Oct 2017 01:00:00 +0100
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Wed, 4 Oct 2017 01:00:00 +0100
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    Personal information
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    Candidate Profile
     Date Submitted:24-04-2014
     Last Modified:25-04-2014 (08:49)
    Job information
     Current job:Aerospace Engineer
     Employment Term:Permanent
     Job location:Own country
     Date available:immediately
     Industry:Civil Agencies/International Organizations, Satellite Manufacturers and Subcontractors, Satellite Operators, , , Launch Systems, Business Services
     KeywordsRadiation effects and reliability of microelectronics


    Aerospace Engineer − Apr 2011 to present

    Electrical Engineering and Flight Data Systems Division, code 561

    NASA Goddard Space Flight Center, Greenbelt, MD 20771


    Sr. Systems Engineer − Dec 2007 to Apr 2011

    MEI Technologies Inc., c.o. NASA Goddard Space Flight Center, Greenbelt, MD 20771


    ·         Radiation lead for the Joint Polar Satellite Systems program

    • Accomplishments

    § Determined origins of on-orbit anomalies that lead to the implementation of mitigations for JPSS-1 and subsequent JPSS spacecrafts

    § Discovered and replaced several parts with weak radiation tolerance, leading to improvement of system reliability and mission assurance; one case lead to center-wide alert for the usage of the part in NASA projects

    • Guidance of overall mission radiation requirements

    § Provide expertise of radiation effects on electronic components, including total-ionizing dose, single-event effect, and displacement damage effect

    § Derived mission ionizing radiation environment specifications using simulation tools (SPENVIS, NOVICE, etc.)

    § Oversight of contractors and sub-contractors radiation assurance programs (four prime contractors and over 20 different sub-contractors)

    • Voting member of the parts control board
    • Key reviewer of cost proposals, waivers, and contract data requirement list submissions
    • Lead radiation test efforts

    §  Implement test guidelines and requirements

    § Manage team of test engineers and technicians for testing using heavy-ions, protons, pulsed-laser, and 60Co gamma rays

    • Perform radiation analysis

    § Calculate upset error rate using simulation tools such as Cosmic Ray Effects on Micro-Electronics(CRÈME-96)

    §  Evaluate Worst Case Analysis


    ·         Principal investigator of radiation reliability of non-volatile memories

    • Accomplishments

    § Coauthor of NASA radiation test guideline of advanced non-volatile memories

    § Published first ever results of single-event effect performance of a production-level resistive memory

    • Collaborate with industry vendors (Samsung, Micron, Panasonic, Adesto, etc.), and government agencies (NASA-JPL, Navy/Crane, Naval Research Laboratory) to investigate suitability of state-of-the-art memories for space application


    ·         Principal investigator of enhanced low dose rate sensitivity (ELDRS) project

    • Accomplishments

    § Only project to comprehensively evaluate the ELDRS response of bipolar transistors and integrated circuit devices

    § Findings impacted the radiation assurance program of the community: ELDRS in bipolar transistors are now considered for part control programs

    • Collaborate with industry vendors (SEMICOA, Texas Instruments, National Semiconductor, Linear Technology, and ST Microelectronics) to assess ELDRS at ultra-low dose rates across commercial-, military-, and space-level parts
    • Manage testing of 400+ parts


    ·         Principal investigator of radiation performance of linear regulators and point-of-load regulators

    • Accomplishments

    §  Published first results of temperature effects on single-event transients in linear devices

    §  Research findings and test results key to qualification of radiation-hardened products



    ·         NASA performance award, 2012

    ·         Outstanding conference paper award coauthor, “Mechanisms and Temperature Dependence of Single Event Latchup Observed in a CMOS Readout Integrated Circuit from 16 – 300 K,”2010 Nuclear Space Radiation Effects Conference (NSREC), Quebec City, Quebec, Canada

    ·         Outstanding data workshop paper award coauthor, “Single Event Effects Compendium of Candidate Spacecraft Electronics for NASA,” 2009, 2010, and 2011 NSREC


    ·         Master of Science in Electrical EngineeringAug 2005 to Dec 2007

    Vanderbilt University, Nashville TN 37235

    Thesis title – “Total Dose Irradiation Effects on Silicon and Germanium MOS Capacitors with Alternative Gate Dielectrics” (Advisor: Ronald Schrimpf)


    ·         Bachelor of Engineering in Electrical Engineering and MathematicsAug 2001 to May 2005

    Vanderbilt University, Nashville TN 37235


    ·         Hardware:

    Keithley 4200 Parametric Analyzer, Agilent 4156 Parametric Analyzer, TRIAD TCII-1200IC and TCII-1333ST memory testers (DDR2/DDR3 and Flash IC chips and modules), 10 KeV ARACOR x-ray irradiator, KNS 4524AD digital wire bonder, Tektronics digital oscilloscope (various models)

    §  Software/simulation tools:

    CRÈME), Tanner S-edit, L-edit and T-spice (VLSI layout, schematic, and circuit simulation tools), TCAD (semiconductor device simulation tool), C++, LabVIEW



    Journals and Conference Proceedings

    §   D. Chen et al., “Evaluation of enhanced low dose rate sensitivity in discrete bipolar junction transistors,” 2012 Radiation Effects Data Workshop proceedings, pp. 1 – 7.

    §   D. Chen et al., “Enhanced low dose rate sensitivity at ultra-low dose rates,” IEEE Trans. Nucl. Sci., vol. 58, no. 6, part 1, pp. 2983 - 2990, Dec. 2011.

    §   T. Oldham et al., “Effect of Radiation Exposure on the Retention of Commercial NAND Flash Memory,” IEEE Trans. Nucl. Sci., vol. 58, no. 6, part 1, pp. 2904 - 2910, Dec. 2011.

    §   D. Chen et al., “The effects of ELDRS at ultra-low dose rates,” 2010 Radiation Effects Data Workshop proceedings.

    §   D. Chen et al., “Radiation performance of commercial SiGe HBT BiCMOS high speed operational amplifiers,” 2010 Radiation Effects Data Workshop proceedings.

    §   C. Marshal et al., “Mechanisms and Temperature Dependence of Single Event Latchup Observed in a CMOS Readout Integrated Circuit from 16 – 300 K,” IEEE Trans. on Nucl. Sci., vol. 57, no. 6, pp. 3078 – 3086, Dec. 2010.

    §   D. Chen et al., “The effects of elevated temperature on pulsed-laser-induced single event transients in analog devices,” IEEE Trans. on Nucl. Sci., vol. 56, no. 6, pp. 3138 – 3144, Dec. 2009.

    §   M. O’Bryan et al., “Recent Single Event Effects Compendium of Candidate Electronics for NASA Space Systems,” Radiation Effects Data Workshop proceedings, 2009, 2010, 2011, 2012, and 2013.

    §   D. Cochran et al., “Recent Total Ionizing Dose and Displacement Damage Compendium of Candidate Electronics for NASA Space Systems,”Radiation Effects Data Workshop proceedings, 2009, 2010, 2011, 2012, and 2013.

    §   D. Chen et al., “Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors,” IEEE Tran. On Nucl Sci., vol. 54, no. 6, pp. 1931 – 1937, Dec. 2007.

    §   D. Chen et al., “Total dose response of Ge MOS capacitors with HfO2/Dy2O3 gate stacks,” IEEE Trans. on Nucl. Sci., vol. 54, no. 4, pp. 971 – 974, Aug. 2007.



    §   “Single-event effect performance of a commercial ReRAM,” to be presented at the Single-Event Effect Symposium and Military and Aerospace Programmable Logic Devices (MAPLD) Workshop, La Jolla, CA 2014.

    §   “Functional interrupts and destructive failures from single-event testing of point-of-load devices,” presented at the Nuclear and Space Radiation Effects Conference, San Francisco, CA, July 2013.

    §   “Radiation qualification of flash memories,” presented at the NASA Electronics Technology Workshop, June 11-12, 2013.

    §   “Point-of-load devices for space,” presented at the NASA Electronics Technology Workshop, June 13, 2013.

    §   “Enhanced low dose rate sensitivity at ultra-low dose rates,” presented at the Nuclear and Space Radiation Effects Conference, Las Vegas, NV, July 2011.

    §   “The effects of elevated temperature on pulsed-laser-induced single event transients in analog devices,” presented at the Nuclear and Space Radiation Effects Conference, Quebec City, Quebec, July 2009.

    §   “Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors,” presented at the Nuclear and Space Radiation Effects Conference, Honolulu, HI, July 2007.

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