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Wed, 17 Aug 2022 22:33:22 +0000
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Wed, 17 Aug 2022 22:29:55 +0000
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Tue, 16 Aug 2022 21:53:18 +0000
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Tue, 16 Aug 2022 20:48:19 +0000
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Tue, 16 Aug 2022 14:15:36 +0000
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Tue, 16 Aug 2022 11:10:43 +0000
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Mon, 15 Aug 2022 21:00:06 +0000
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Mon, 15 Aug 2022 17:02:15 +0000
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Mon, 15 Aug 2022 15:29:26 +0000
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Sun, 14 Aug 2022 22:39:58 +0000
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Sun, 14 Aug 2022 21:00:09 +0000
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Sun, 14 Aug 2022 09:15:04 +0000
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  • CV: Aerospace Engineer

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    Personal information
     Name:<withheld>
     Age:<withheld>
     Country:<withheld>
     Location:<withheld>
    Contact information
     Email:<withheld>
     Phone:<withheld>
     Mobile:<withheld>
    Candidate Profile
     Date Submitted:24-04-2014
     Last Modified:25-04-2014 (08:49)
    Job information
     Current job:Aerospace Engineer
     Employment Term:Permanent
     Job location:Own country
     Date available:immediately
     Industry:Civil Agencies/International Organizations, Satellite Manufacturers and Subcontractors, Satellite Operators, , , Launch Systems, Business Services
     KeywordsRadiation effects and reliability of microelectronics
    CV


    EXPERIENCE

    Aerospace Engineer − Apr 2011 to present

    Electrical Engineering and Flight Data Systems Division, code 561

    NASA Goddard Space Flight Center, Greenbelt, MD 20771

     

    Sr. Systems Engineer − Dec 2007 to Apr 2011

    MEI Technologies Inc., c.o. NASA Goddard Space Flight Center, Greenbelt, MD 20771

     

    ·         Radiation lead for the Joint Polar Satellite Systems program

    • Accomplishments

    § Determined origins of on-orbit anomalies that lead to the implementation of mitigations for JPSS-1 and subsequent JPSS spacecrafts

    § Discovered and replaced several parts with weak radiation tolerance, leading to improvement of system reliability and mission assurance; one case lead to center-wide alert for the usage of the part in NASA projects

    • Guidance of overall mission radiation requirements

    § Provide expertise of radiation effects on electronic components, including total-ionizing dose, single-event effect, and displacement damage effect

    § Derived mission ionizing radiation environment specifications using simulation tools (SPENVIS, NOVICE, etc.)

    § Oversight of contractors and sub-contractors radiation assurance programs (four prime contractors and over 20 different sub-contractors)

    • Voting member of the parts control board
    • Key reviewer of cost proposals, waivers, and contract data requirement list submissions
    • Lead radiation test efforts

    §  Implement test guidelines and requirements

    § Manage team of test engineers and technicians for testing using heavy-ions, protons, pulsed-laser, and 60Co gamma rays

    • Perform radiation analysis

    § Calculate upset error rate using simulation tools such as Cosmic Ray Effects on Micro-Electronics(CRÈME-96)

    §  Evaluate Worst Case Analysis

     

    ·         Principal investigator of radiation reliability of non-volatile memories

    • Accomplishments

    § Coauthor of NASA radiation test guideline of advanced non-volatile memories

    § Published first ever results of single-event effect performance of a production-level resistive memory

    • Collaborate with industry vendors (Samsung, Micron, Panasonic, Adesto, etc.), and government agencies (NASA-JPL, Navy/Crane, Naval Research Laboratory) to investigate suitability of state-of-the-art memories for space application

     

    ·         Principal investigator of enhanced low dose rate sensitivity (ELDRS) project

    • Accomplishments

    § Only project to comprehensively evaluate the ELDRS response of bipolar transistors and integrated circuit devices

    § Findings impacted the radiation assurance program of the community: ELDRS in bipolar transistors are now considered for part control programs

    • Collaborate with industry vendors (SEMICOA, Texas Instruments, National Semiconductor, Linear Technology, and ST Microelectronics) to assess ELDRS at ultra-low dose rates across commercial-, military-, and space-level parts
    • Manage testing of 400+ parts

     

    ·         Principal investigator of radiation performance of linear regulators and point-of-load regulators

    • Accomplishments

    §  Published first results of temperature effects on single-event transients in linear devices

    §  Research findings and test results key to qualification of radiation-hardened products


                   

    AWARDS

    ·         NASA performance award, 2012

    ·         Outstanding conference paper award coauthor, “Mechanisms and Temperature Dependence of Single Event Latchup Observed in a CMOS Readout Integrated Circuit from 16 – 300 K,”2010 Nuclear Space Radiation Effects Conference (NSREC), Quebec City, Quebec, Canada

    ·         Outstanding data workshop paper award coauthor, “Single Event Effects Compendium of Candidate Spacecraft Electronics for NASA,” 2009, 2010, and 2011 NSREC


    EDUCATION

    ·         Master of Science in Electrical EngineeringAug 2005 to Dec 2007

    Vanderbilt University, Nashville TN 37235

    Thesis title – “Total Dose Irradiation Effects on Silicon and Germanium MOS Capacitors with Alternative Gate Dielectrics” (Advisor: Ronald Schrimpf)

     

    ·         Bachelor of Engineering in Electrical Engineering and MathematicsAug 2001 to May 2005

    Vanderbilt University, Nashville TN 37235


    EXPERTISE

    ·         Hardware:

    Keithley 4200 Parametric Analyzer, Agilent 4156 Parametric Analyzer, TRIAD TCII-1200IC and TCII-1333ST memory testers (DDR2/DDR3 and Flash IC chips and modules), 10 KeV ARACOR x-ray irradiator, KNS 4524AD digital wire bonder, Tektronics digital oscilloscope (various models)

    §  Software/simulation tools:

    CRÈME), Tanner S-edit, L-edit and T-spice (VLSI layout, schematic, and circuit simulation tools), TCAD (semiconductor device simulation tool), C++, LabVIEW


    PUBLICATIONS

     

    Journals and Conference Proceedings

    §   D. Chen et al., “Evaluation of enhanced low dose rate sensitivity in discrete bipolar junction transistors,” 2012 Radiation Effects Data Workshop proceedings, pp. 1 – 7.

    §   D. Chen et al., “Enhanced low dose rate sensitivity at ultra-low dose rates,” IEEE Trans. Nucl. Sci., vol. 58, no. 6, part 1, pp. 2983 - 2990, Dec. 2011.

    §   T. Oldham et al., “Effect of Radiation Exposure on the Retention of Commercial NAND Flash Memory,” IEEE Trans. Nucl. Sci., vol. 58, no. 6, part 1, pp. 2904 - 2910, Dec. 2011.

    §   D. Chen et al., “The effects of ELDRS at ultra-low dose rates,” 2010 Radiation Effects Data Workshop proceedings.

    §   D. Chen et al., “Radiation performance of commercial SiGe HBT BiCMOS high speed operational amplifiers,” 2010 Radiation Effects Data Workshop proceedings.

    §   C. Marshal et al., “Mechanisms and Temperature Dependence of Single Event Latchup Observed in a CMOS Readout Integrated Circuit from 16 – 300 K,” IEEE Trans. on Nucl. Sci., vol. 57, no. 6, pp. 3078 – 3086, Dec. 2010.

    §   D. Chen et al., “The effects of elevated temperature on pulsed-laser-induced single event transients in analog devices,” IEEE Trans. on Nucl. Sci., vol. 56, no. 6, pp. 3138 – 3144, Dec. 2009.

    §   M. O’Bryan et al., “Recent Single Event Effects Compendium of Candidate Electronics for NASA Space Systems,” Radiation Effects Data Workshop proceedings, 2009, 2010, 2011, 2012, and 2013.

    §   D. Cochran et al., “Recent Total Ionizing Dose and Displacement Damage Compendium of Candidate Electronics for NASA Space Systems,”Radiation Effects Data Workshop proceedings, 2009, 2010, 2011, 2012, and 2013.

    §   D. Chen et al., “Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors,” IEEE Tran. On Nucl Sci., vol. 54, no. 6, pp. 1931 – 1937, Dec. 2007.

    §   D. Chen et al., “Total dose response of Ge MOS capacitors with HfO2/Dy2O3 gate stacks,” IEEE Trans. on Nucl. Sci., vol. 54, no. 4, pp. 971 – 974, Aug. 2007.

     

    Presentations

    §   “Single-event effect performance of a commercial ReRAM,” to be presented at the Single-Event Effect Symposium and Military and Aerospace Programmable Logic Devices (MAPLD) Workshop, La Jolla, CA 2014.

    §   “Functional interrupts and destructive failures from single-event testing of point-of-load devices,” presented at the Nuclear and Space Radiation Effects Conference, San Francisco, CA, July 2013.

    §   “Radiation qualification of flash memories,” presented at the NASA Electronics Technology Workshop, June 11-12, 2013.

    §   “Point-of-load devices for space,” presented at the NASA Electronics Technology Workshop, June 13, 2013.

    §   “Enhanced low dose rate sensitivity at ultra-low dose rates,” presented at the Nuclear and Space Radiation Effects Conference, Las Vegas, NV, July 2011.

    §   “The effects of elevated temperature on pulsed-laser-induced single event transients in analog devices,” presented at the Nuclear and Space Radiation Effects Conference, Quebec City, Quebec, July 2009.

    §   “Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors,” presented at the Nuclear and Space Radiation Effects Conference, Honolulu, HI, July 2007.


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